Abstract:Interlayer excitons have been extensively studied in monolayer transition metal dichalcogenide (TMD) heterobilayers mainly due to the long lifetime, which is beneficial for a wide range of optoelectronic applications. To date, the majority of investigations of interlayer excitons in TMD heterobilayers have been focusing on the geometric arrangement of structures, spin-valley lifetime, and interlayer valley excitons with interlayer hopping rules. Nevertheless, interlayer excitons in TMD heterobilayers strongly depend on the local atomic registry and coupling strength, which increase the complexity of the device fabrication. Here, we report pronounced interlayer exciton emission in two-dimensional (2D) perovskite/monolayer TMD heterostructures without the need of thermal annealing or specific geometric arrangements, and the interlayer exciton emission is rather general among 2D perovskites and monolayer TMDs. Such interlayer exciton emission completely dominates the emission spectrum at 78 K regardless of the stacking sequence, suggesting the robust interlayer coupling in 2D perovskite/monolayer TMD heterostructures. Furthermore, the interlayer exciton emission shows a large blue-shift with increasing laser intensity due to the repulsive dipole-dipole interaction and can persist above 220 K. Importantly, the interlayer exciton emission also possesses robust circular polarization in chiral 2D perovskite/monolayer WSe2 heterostructures, which can be applied to manipulate the valley degree of freedom for valleytronic devices. Our findings would provide a favorable platform to explore interlayer coupling and related physical processes in 2D perovskites and TMDs and further provoke more investigations into the understanding and controlling of excitonic effects and associated optoelectronic applications in van der Waals heterostructures over a broad-range spectral response.

Enhancing Layer-Engineered Interlayer Exciton Emission and Valley Polarization in van der Waals Heterostructures via Strain

Layer engineered interlayer excitons

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation

Valleytronics Meets Straintronics: Valley Fine Structure Engineering of 2D Transition Metal Dichalcogenides

Strain control of exciton and trion spin-valley dynamics in monolayer transition metal dichalcogenides

Room temperature interlayer exciton valley polarization and valley Hall effect

Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride

Interface Engineering Modulated Valley Polarization in MoS2/hBN Heterostructure

Strain‐Engineered Level Alignment in the MoTe2/WSe2 Heterobilayer

Robust Interlayer Coupling in Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures

Interlayer exciton formation, relaxation, and transport in TMD van der Waals heterostructures

Excitonic devices with van der Waals heterostructures: valleytronics meets twistronics

Strong interlayer coupling and long-lived interlayer excitons in two-dimensional perovskite derivatives and transition metal dichalcogenides van der Waals heterostructures

Strain-induced Spatially Indirect Exciton Recombination in Zinc-Blende/wurtzite CdS Heterostructures

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures

Emergence of non-uniform strain induced exciton species in homo- and heterobilayer transition metal dichalcogenides

Strain-tunable valley polarization and localized excitons in monolayer WSe_2

Simultaneously Enhanced Emission and Valley Polarization of Dark Excitons of Monolayer WSe 2 Using the Dual Effect of Strain and Magnetic Proximity

Strain-Induced Electronic Structure Changes in Stacked van der Waals Heterostructures