Abstract:Interlayer excitons have been extensively studied in monolayer transition metal dichalcogenide (TMD) heterobilayers mainly due to the long lifetime, which is beneficial for a wide range of optoelectronic applications. To date, the majority of investigations of interlayer excitons in TMD heterobilayers have been focusing on the geometric arrangement of structures, spin-valley lifetime, and interlayer valley excitons with interlayer hopping rules. Nevertheless, interlayer excitons in TMD heterobilayers strongly depend on the local atomic registry and coupling strength, which increase the complexity of the device fabrication. Here, we report pronounced interlayer exciton emission in two-dimensional (2D) perovskite/monolayer TMD heterostructures without the need of thermal annealing or specific geometric arrangements, and the interlayer exciton emission is rather general among 2D perovskites and monolayer TMDs. Such interlayer exciton emission completely dominates the emission spectrum at 78 K regardless of the stacking sequence, suggesting the robust interlayer coupling in 2D perovskite/monolayer TMD heterostructures. Furthermore, the interlayer exciton emission shows a large blue-shift with increasing laser intensity due to the repulsive dipole-dipole interaction and can persist above 220 K. Importantly, the interlayer exciton emission also possesses robust circular polarization in chiral 2D perovskite/monolayer WSe2 heterostructures, which can be applied to manipulate the valley degree of freedom for valleytronic devices. Our findings would provide a favorable platform to explore interlayer coupling and related physical processes in 2D perovskites and TMDs and further provoke more investigations into the understanding and controlling of excitonic effects and associated optoelectronic applications in van der Waals heterostructures over a broad-range spectral response.

Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation

Enhancing Layer-Engineered Interlayer Exciton Emission and Valley Polarization in van der Waals Heterostructures via Strain

Giant light emission enhancement in strain-engineered InSe/MS$_2$ (M=Mo,W) van der Waals heterostructures

Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride

Layer engineered interlayer excitons

Electrical Control and Transport of Tightly Bound Interlayer Excitons in a Heterostructure

Unveiling strain-enhanced moiré exciton localization in twisted van der Waals homostructures

Hybridized indirect excitons in MoS2/WS2 heterobilayers

Electrical control and transport of tightly bound interlayer excitons in a MoSe2/hBN/MoSe2 heterostructure

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure

Interlayer Exciton in Multilayer-Monolayer Van Der Waals Heterostructures

In-situ spontaneous emission control of MoSe$_2$-WSe$_2$ interlayer excitons with near-unity quantum yield

Control of the orbital character of indirect excitons in MoS2/WS2 heterobilayers

Strain engineering of the electronic states of silicon-based quantum emitters

Strain regulated interlayer coupling in WSe 2 /WS 2 heterobilayer

Electronic and optical properties of InSe/CuI van der Waals heterostructure with type-II band alignment: Effects of vertical strain and electric field

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

Robust Interlayer Coupling in Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures

Quadrupolar–dipolar excitonic transition in a tunnel-coupled van der Waals heterotrilayer

Voltage-controlled long-range propagation of indirect excitons in van der Waals heterostructure