Voltage-controlled long-range propagation of indirect excitons in van der Waals heterostructure

L. H. Fowler-Gerace,D. J. Choksy,L. V. Butov

DOI: https://doi.org/10.1103/PhysRevB.104.165302

2021-01-05

Abstract:Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. A proof of principle for excitonic devices was demonstrated in GaAs heterostructures where the operation of excitonic devices is limited to low temperatures. IXs in van der Waals transition-metal dichalcogenide (TMD) heterostructures are characterized by high binding energies making IXs robust at room temperature and offering an opportunity to create excitonic devices operating at high temperatures suitable for applications. However, a characteristic feature of TMD heterostructures is the presence of moiré superlattice potentials, which are predicted to cause modulations of IX energy reaching tens of meV. These in-plane energy landscapes can lead to IX localization, making IX propagation fundamentally different in TMD and GaAs heterostructures and making uncertain if long-range IX propagation can be realized in TMD heterostructures. In this work, we realize long-range IX propagation with the $1/e$ IX luminescence decay distances reaching 13 microns in a MoSe$_2$/WSe$_2$ heterostructure. We trace the IX luminescence along the IX propagation path. We also realize control of the long-range IX propagation: the IX luminescence signal in the drain of an excitonic transistor is controlled within 40 times by gate voltage. These data show that the long-range IX propagation is possible in TMD heterostructures with the predicted moiré superlattice potentials.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

### Problems the paper attempts to solve

This paper aims to solve the difficult problem of achieving long - range indirect exciton (IXs) propagation in two - dimensional material (such as transition metal dichalcogenide, TMD) heterostructures. Specifically, the paper focuses on how to overcome the influence of the moiré superlattice potential on the indirect exciton propagation and realize long - range indirect exciton devices operable at room temperature.

#### Background and challenges

1. **Application prospects of indirect excitons (IXs)**:
- Indirect excitons are composite particles formed by electrons and holes respectively confined in separate layers.
- They have a long lifetime and large binding energy, which makes them still stable at high temperatures and suitable for developing high - performance optoelectronic devices.
- In GaAs heterostructures, the operation of indirect exciton devices is limited to low - temperature environments because these excitons are unstable at high temperatures.

2. **Advantages and challenges of TMD heterostructures**:
- The indirect excitons in TMD heterostructures have a relatively high binding energy (up to several hundred meV) and can remain stable at room temperature, which makes it possible to develop exciton devices operating at high temperatures.
- However, there are significant moiré superlattice potentials in TMD heterostructures. These potential fields will cause the energy modulation of indirect excitons, thus affecting their propagation characteristics and may lead to the localization of IXs, making long - range propagation uncertain.

#### Research objectives

- **Achieve long - range indirect exciton propagation**: Verify whether long - range indirect exciton propagation can be achieved in the MoSe₂/WSe₂ TMD heterostructure and measure its propagation distance.
- **Voltage - controlled propagation**: Study how to control the propagation of indirect excitons by applying a voltage, especially verify whether the voltage can enhance the long - range propagation of IXs.
- **Overcome the influence of the moiré superlattice potential**: Explore the specific influence of the moiré superlattice potential on the IXs propagation and propose effective solutions.

#### Main achievements

- Achieved indirect exciton propagation up to 13 micrometers in the MoSe₂/WSe₂ TMD heterostructure.
- Successfully controlled the propagation of indirect excitons by applying a voltage, achieving a 40 - fold signal enhancement.
- Verified the long - range IX propagation under voltage control and demonstrated that the device can be switched between "on" and "off" states in the temperature range below 50 K.

These achievements indicate that achieving long - range indirect exciton propagation in TMD heterostructures is feasible, laying the foundation for further developing exciton devices operating at high temperatures.