Strain-induced optoelectronic tunability of fiber grown 2D transition metal dichalcogenides

Avi Niv,Assaf Ya'akobovitz
DOI: https://doi.org/10.1109/cleo/europe-eqec52157.2021.9542620
2021-06-21
Abstract:Two dimensional (2D) materials are characterized by an in-plane strong covalent bond and out-of-plane weak Van der Waals bond between the constituent atoms. Graphene, a single layer of carbon atoms arranged in the honeycomb structure, is the most prominent example of such materials with distinctive linear dispersion leading to its unique optical and electronic properties. However, the lack of an energy bandgap limits its applicability in electronic and optoelectronic devices [1], [2]. Atomically thin transition metal di-chalcogenides (TMD) are direct bandgap materials [4]. This fact opens new possibilities for optoelectronic applications, especially when combined with their excellent mechanical flexibility and high carrier mobility, widely tunable bandgap, valley polarization, and strong light-matter interaction [3]–[5].
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