Strain-modulated defect engineering of two-dimensional materials

Prosun Santra,Sadegh Ghaderzadeh,Mahdi Ghorbani-Asl,Hannu-Pekka Komsa,Elena Besley,Arkady V. Krasheninnikov
DOI: https://doi.org/10.1038/s41699-024-00472-x
IF: 10.516
2024-05-07
npj 2D Materials and Applications
Abstract:Strain- and defect-engineering are two powerful approaches to tailor the opto-electronic properties of two-dimensional (2D) materials, but the relationship between applied mechanical strain and behavior of defects in these systems remains elusive. Using first-principles calculations, we study the response to external strain of h -BN, graphene, MoSe 2 , and phosphorene, four archetypal 2D materials, which contain substitutional impurities. We find that the formation energy of the defect structures can either increase or decrease with bi-axial strain, tensile or compressive, depending on the atomic radius of the impurity atom, which can be larger or smaller than that of the host atom. Analysis of the strain maps indicates that this behavior is associated with the compressive or tensile local strains produced by the impurities that interfere with the external strain. We further show that the change in the defect formation energy is related to the change in elastic moduli of the 2D materials upon introduction of impurity, which can correspondingly increase or decrease. The discovered trends are consistent across all studied 2D materials and are likely to be general. Our findings open up opportunities for combined strain- and defect-engineering to tailor the opto-electronic properties of 2D materials, and specifically, the location and properties of single-photon emitters.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
What problem does this paper attempt to address?
The problem this paper attempts to address is the interaction between strain engineering and defect engineering in two-dimensional (2D) materials and their impact on the optoelectronic properties of the materials. Specifically, the paper investigates the changes in the formation energy of substitutional impurity defects under biaxial tensile or compressive strain in four typical 2D materials—hexagonal boron nitride (h-BN), graphene, molybdenum diselenide (MoSe2), and phosphorene—using first-principles calculations. The main findings include: - When the impurity atom radius is smaller than the host atom radius, the defect formation energy increases under biaxial tensile strain; conversely, when the impurity atom radius is larger than the host atom radius, the defect formation energy decreases under biaxial tensile strain. - This behavior is related to the interference of local compressive or tensile strain induced by the impurity with the applied strain. - The paper further demonstrates that the change in defect formation energy is associated with the change in the elastic modulus of the 2D material after the introduction of impurities. These findings reveal the potential applications of strain engineering and defect engineering in regulating the optoelectronic properties of 2D materials, with particular emphasis on the control of the position and nature of single-photon emitters. Additionally, the paper discusses the presence of similar trends in different types of 2D materials, suggesting that this phenomenon may be universally applicable.