Abstract:Transition metal dichalcogenide heterostructures exhibit intriguing electronic and optical properties that largely depend on the level alignment between the constituents. This study based on density‐functional theory demonstrates that strain can be used to turn type I MoTe2/WSe2 bilayers into type II heterostructures with favorable characteristics for efficient charge separation and optoelectronic applications. When stacked into heterostructures, layered transition metal dichalcogenides (TMDCs) exhibit peculiar electronic and optical properties that may differ substantially from those of their constituents and that largely depend on the level alignment. For example, the MoTe2/WSe2 heterobilayer exhibits a type I band lineup, which can be exploited in emitting devices but limits charge separation. In this first‐principle study based on density functional theory and many‐body perturbation theory, strain is proposed as an effective means to make MoTe2/WSe2 a type II heterostructure. By exploring several configurations where biaxial strain is applied to either or both monolayers, the top of the valence band and the bottom of the conduction band are found at different points in k‐space leading to an indirect‐to‐direct bandgap transition when the lattice constant of WSe2 is expanded by 3.2% or more. In terms of optical properties, all considered systems exhibit a first dark excitation, consistently shifting in energy with the direct electronic gap, while the absorption onset does not vary significantly with strain. Our findings suggest strain as a powerful tool for fine tuning the electronic and optical properties of TMDC heterostructures while preserving their fundamental characteristics, thus opening new avenues for designing optoelectronic applications.

Strain-tunable orbital, spin-orbit, and optical properties of monolayer transition-metal dichalcogenides

Tunability of Multiple Ultraflat Bands and Effect of Spin-Orbit Coupling in Twisted Bilayer Transition Metal Dichalcogenides

Impact of strain on the optical fingerprint of monolayer transition metal dichalcogenides

Strain Modulation by van der Waals Coupling in Bilayer Transition Metal Dichalcogenide.

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Biaxial strain in atomically thin transition metal dichalcogenides

A First-Principle Study of Monolayer Transition Metal Carbon Trichalcogenides

Strain‐Engineered Level Alignment in the MoTe2/WSe2 Heterobilayer

Scaling law for strain dependence of Raman spectra in transition-metal dichalcogenides

Strain-engineering in two-dimensional transition metal dichalcogenide alloys

Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides

Electronic Phase Transformations and Energy Gap Variations in Uniaxial and Biaxial Strained Monolayer VS$_2$ TMDs: A Comprehensive DFT and Beyond-DFT Study

Theory of strain in single-layer transition metal dichalcogenides

Tuning Electronic and Magnetic Properties of Early Transition Metal Dichalcogenides via Tensile Strain

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Strain engineering the structures and electronic properties of Janus monolayer transition-metal dichalcogenides

Strain-induced optoelectronic tunability of fiber grown 2D transition metal dichalcogenides

Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications

Band Structure Engineering Through Van Der Waals Heterostructing Superlattices of Two‐dimensional Transition Metal Dichalcogenides

Geometric band properties in strained monolayer transition metal dichalcogenides using simple band structures

Effects of structural distortions on the electronic structure of T -type transition metal dichalcogenides