Abstract:Presenting a comprehensive review on recent advancements in strain‐engineered 2D transition metal dichalcogenides (TMDs). This review delves into precision tuning of valley physics through strain engineering, elucidating mechanisms and connections between strain‐induced modifications and optoelectronic characteristics. It offers insights into future directions of valley‐straintronics, underscoring the significant promise of valley‐strain engineering in TMDs for fundamental studies and practical applications. 2D transition metal dichalcogenides (TMDs) have emerged as a novel class of semiconductors with promising applications in optoelectronics, owing to their rich and tunable valley fine structure, known as valleytronics. Strain engineering in TMDs presents opportunities to tailor their valley fine structures and band alignment, which greatly expands the potential to investigate their intrinsic properties and improve device performance, thus opening a new field of straintronics. In this review, recent advances in strain‐engineered 2D TMDs are summarized, with a focus on new phenomena and applications enabled by precision tuning of valley physics. The underlying mechanisms and connections are delineated between strain‐induced modifications to the valley fine structures based on intravalley, intervalley, and interlayer band alignment in single and heterostructure TMDs. These insights allow targeted strain control strategies to be devised for optimizing optoelectronic characteristics. This review provides perspectives and guidance on the future directions of valley‐straintronics and flexible 2D optoelectronics using TMDs, highlighting the substantial promise of valley‐strain engineering in TMDs for fundamental valley physics studies as well as practical device applications.

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Symmetry-Constrained Reorganization Of Dirac Cones In Topological Insulators By Surface Modification

Tuning Dirac states by strain in the topological insulator Bi 2 Se 3

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Strain Tuning Of Topological Band Order In Cubic Semiconductors

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Strain-tunable synthetic gauge fields in topological photonic graphene

Tuning of Circular Photogalvanic Effect of Surface States in the Topological Insulator Sb2Te3 Via Structural Deformation

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Strain Tunable Semimetal-Topological-Insulator Transition in Monolayer 1T-WTe<sub>2</sub>

Tuning of circular photogalvanic effect of surface states in the topological insulator Sb 2 Te 3 via structural deformation

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

Strain tuning of the Curie temperature and valley polarization in two dimensional ferromagnetic WSe2/CrSnSe3 heterostructure

Strain Tunable Semimetal–Topological-Insulator Transition in Monolayer 1 T ′ − WTe 2

Enhanced Valley Polarization at Valence/conduction Band in Transition-Metal-doped WTe2 under Strain Force

Material Realization of Topological Crystalline Insulators: Role of Strain and Spin-Orbit Coupling

Strain-engineering induced topological phase transitions and multiple valley states in Janus monolayer VCSiN4