Abstract:Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no carriers and the half-integer quantum Hall effect (QHE) observable even at room temperature [1-3]. Because graphene is only one atom thick, it is also amenable to external influences including mechanical deformation. The latter offers a tempting prospect of controlling graphene's properties by strain and, recently, several reports have examined graphene under uniaxial deformation [4-8]. Although the strain can induce additional Raman features [7,8], no significant changes in graphene's band structure have been either observed or expected for realistic strains of approx. 10% [9-11]. Here we show that a designed strain aligned along three main crystallographic directions induces strong gauge fields [12-14] that effectively act as a uniform magnetic field exceeding 10 T. For a finite doping, the quantizing field results in an insulating bulk and a pair of countercirculating edge states, similar to the case of a topological insulator [15-20]. We suggest realistic ways of creating this quantum state and observing the pseudo-magnetic QHE. We also show that strained superlattices can be used to open significant energy gaps in graphene's electronic spectrum.

Strain-induced Enhanced Interlayer Coupling, Landau Quantizations, and Valley Polarization in Twisted Graphene Bilayer

Strain and Curvature Induced Evolution of Electronic Band Structures in Twisted Graphene Bilayer

Realizing One-Dimensional Electronic States in Graphene Via Coupled Zeroth Pseudo-Landau Levels.

Strain-induced excitonic instability in twisted bilayer graphene

Dispersions and magnetism of strain-induced pseudo Landau levels in Bernal-stacked bilayer graphene

Exotic electronic states in gradient-strained untwisted graphene bilayers

Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

Observation of Landau-level-like Quantization at 77 K along a Strained-Induced Graphene Ridge

Lattice Relaxation, Mirror Symmetry and Magnetic Field Effects on Ultraflat Bands in Twisted Trilayer Graphene

Correlated States in Twisted Double Bilayer Graphene

Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer

Strain-Induced Pseudomagnetic Fields in Twisted Graphene Nanoribbons

Local Density of States Modulated by Strain in Marginally Twisted Bilayer Graphene

Interaction-driven topological insulator states in strained graphene

Band Gap and Quantum Valley Hall Edge State in Uniaxial Strain Superlattice of Graphene

Strain disorder and gapless intervalley coherent phase in twisted bilayer graphene

Landau Quantization of a Narrow Doubly-Folded Wrinkle in Monolayer Graphene.

Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering

Correlation-Induced Valley Splitting And Orbital Magnetism In A Strain-Induced Zero-Energy Flatband In Twisted Bilayer Graphene Near The Magic Angle

Strain-induced One-Dimensional Landau Level Quantization in Corrugated Graphene

Magnetic-field-assisted electron confinement and valley splitting in strained graphene