Valley polarization braiding in strained graphene

D. Faria,C. León,L. R. F. Lima,A. Latgé,N. Sandler

DOI: https://doi.org/10.1103/PhysRevB.101.081410

2019-09-26

Abstract:Previous works on deformed graphene predict the existence of valley-polarized states, however, optimal conditions for their detection remain challenging. We show that in the quantum Hall regime, edge-like states in strained regions can be isolated in energy within Landau gaps. We identify precise conditions for new conducting edges-like states to be valley polarized, with the flexibility of positioning them at chosen locations in the system. A map of local density of states as a function of energy and position reveals a unique braid pattern that serves as a fingerprint to identify valley polarization.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: How to realize and detect the valley polarization state in graphene, especially in the Quantum Hall regime, how to create and separate the valley - polarized edge states through strain engineering.

Specifically, the authors focus on how to generate and isolate the valley - polarized edge states using the strained regions in graphene when an external magnetic field is applied. These edge states can be distinguished from other extended states in terms of energy and space, thus providing new possibilities for the design of valleytronics and quantum computing devices.

### Detailed description of the main problems

1. **Generation and detection of the valley - polarized state**:
- Previous experiments have shown that strain in graphene can lead to valley splitting, but the optimal generation and detection conditions have not been clearly defined.
- This paper proposes that under the Quantum Hall effect, by introducing a sufficiently strong external magnetic field, the valley - polarized edge states can be effectively isolated in energy and space.

2. **Properties of the valley - polarized edge states**:
- It has been found that when the magnetic length \( l_B \) of the system is less than the width \( b \) of the strained region (i.e., \( \gamma = l_B / b < 1 \)), the valley - polarized edge states will show more obvious spatial separation.
- This separation enables the valley - polarized current to be effectively detected at specific locations, thus making it possible to design quantum computing devices such as logic gates.

3. **Theoretical model and experimental verification**:
- The authors use a tight - binding model and a continuum model combined with numerical simulations to study the influence of strain on the electronic structure of graphene.
- The results show that within an appropriate range of parameters, the valley - polarized state can be identified by measuring the local density of states (LDOS) with a scanning tunneling microscope (STM), and these states will form a unique braiding pattern when passing through the strained region.

### Formula summary

- **Magnetic length**: \[ l_B=\sqrt{\frac{\hbar}{eB}} \]
- **Strain tensor**: \[ \epsilon_{ij}=\frac{1}{2}\partial_i h\partial_j h \]
- **Pseudo - magnetic field**: \[ B_{ps}^{K(K')}=\pm\frac{\Phi_0}{2\pi}\left(-\frac{\beta}{2a_{cc}}\right)\nabla\times A_{ps} \]
- **Hamiltonian**: \[ H_{K(K')}=\hbar v_F\sigma\cdot\left(-i\nabla-\frac{e}{\hbar}A\pm\frac{\beta}{2a_{cc}}A_{ps}\right) \]

Through these studies, the authors show how to experimentally realize and detect the valley - polarized state, providing theoretical and technical support for the further development of new devices based on valleytronics.