Abstract:A two-dimensional electron system placed in a magnetic field develops Landau levels, where strong Coulomb interactions lead to the appearance of many-body correlated ground states. Quantum numbers similar to the electron spin enable the understanding and control of complex ground state order and collective excitations. Owing to its spin, valley and orbital degrees of freedom, Bernal-stacked bilayer graphene offers a rich platform to pursue correlated phenomena in two dimensions. In this work, we fabricate dual-gated Bernal-stacked bilayer graphene devices and demonstrate unprecedented fine control over its valley isospin degrees of freedom using a perpendicular electric field. Higher sample quality enables us to probe regimes obscured by disorder in previous studies. We present evidence for a new even-denominator fractional quantum Hall state at filling factor {\nu} = 5/2. The 5/2 state is found to be spontaneously valley polarized in the limit of vanishing valley Zeeman splitting, consistent with a theoretical prediction made regarding the spin polarization of the Moore-Read state. In the vicinity of the even-denominator fractional quantum Hall states, we observe the appearance of the predicted Levin-Halperin daughter states of the Moore-Read Pfaffian wave function at {\nu}= 3/2, 7/2, and -1/2 and of the anti-Pfaffian at {\nu}= 5/2. These observations suggest the breaking of particle-hole symmetry in bilayer graphene. We construct a comprehensive valley polarization phase diagram for the Jain sequence fractional states surrounding filling factor 3/2. These results are well explained by a two-component composite fermion model, further demonstrating the SU(2) nature of the valley isospin in bilayer graphene. Our experiment paves the path for future efforts of manipulating the valley isospin in bilayer graphene to engineer exotic topological orders and quantum information processes.

Valley polarization braiding in strained graphene

Strain-induced Enhanced Interlayer Coupling, Landau Quantizations, and Valley Polarization in Twisted Graphene Bilayer

Controllable Valley Polarization Using Graphene Multiple Topological Line Defects

Manipulation of valley isospins in strained graphene for valleytronics

Valley Isospin Controlled Fractional Quantum Hall States in Bilayer Graphene

Valley-dependent Brewster Angles and Goos-Hänchen Effect in Strained Graphene.

Valley-Polarized Quantum Hall Phase in a Strain-Controlled Dirac System

Valley Filtering in Graphene with a Dirac Gap

Erratum: Valley Isospin Controlled Fractional Quantum Hall States in Bilayer Graphene [Phys. Rev. X <b>12</b> , 031019 (2022)]

Generation Of A Fully Valley-Polarized Current In Bulk Graphene

Valley-dependent odd quantum Hall states induced by side potential in graphene

Observation of Landau-level-like Quantization at 77 K along a Strained-Induced Graphene Ridge

Magnetic-field-assisted electron confinement and valley splitting in strained graphene

Gate Controlled Valley Polarizer in Bilayer Graphene

Valley-Selective Klein Tunneling through a Superlattice Barrier in Graphene

Absence of edge states at armchair edges in inhomogeneously strained graphene under a pseudomagnetic field

Strain and Curvature Induced Evolution of Electronic Band Structures in Twisted Graphene Bilayer

Valley separation of photoexcited carriers in bilayer graphene

Valley-contrasting Physics in Graphene: Magnetic Moment and Topological Transport.

Direct Measurement of Discrete Valley and Orbital Quantum Numbers in Bilayer Graphene