Abstract:Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no carriers and the half-integer quantum Hall effect (QHE) observable even at room temperature [1-3]. Because graphene is only one atom thick, it is also amenable to external influences including mechanical deformation. The latter offers a tempting prospect of controlling graphene's properties by strain and, recently, several reports have examined graphene under uniaxial deformation [4-8]. Although the strain can induce additional Raman features [7,8], no significant changes in graphene's band structure have been either observed or expected for realistic strains of approx. 10% [9-11]. Here we show that a designed strain aligned along three main crystallographic directions induces strong gauge fields [12-14] that effectively act as a uniform magnetic field exceeding 10 T. For a finite doping, the quantizing field results in an insulating bulk and a pair of countercirculating edge states, similar to the case of a topological insulator [15-20]. We suggest realistic ways of creating this quantum state and observing the pseudo-magnetic QHE. We also show that strained superlattices can be used to open significant energy gaps in graphene's electronic spectrum.

Strain and Curvature Induced Evolution of Electronic Band Structures in Twisted Graphene Bilayer

Strain-induced Enhanced Interlayer Coupling, Landau Quantizations, and Valley Polarization in Twisted Graphene Bilayer

Exotic electronic states in gradient-strained untwisted graphene bilayers

Flat Bands and Extreme Pseudomagnetic Fields in Monolayer Graphene by Topography Strain Engineering

Lattice Relaxation, Mirror Symmetry and Magnetic Field Effects on Ultraflat Bands in Twisted Trilayer Graphene

Realizing One-Dimensional Electronic States in Graphene Via Coupled Zeroth Pseudo-Landau Levels.

Large-area, Periodic, and Tunable Intrinsic Pseudo-Magnetic Fields in Low-Angle Twisted Bilayer Graphene

Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering

Pressure and Electric Field Dependence of Quasicrystalline Electronic States in 30^∘ Twisted Bilayer Graphene

Effects of strain on the flat band in twisted bilayer graphene

Strain and Spin-Orbit Coupling Engineering in Twisted WS2/Graphene Heterobilayer

Strain-induced excitonic instability in twisted bilayer graphene

Local Density of States Modulated by Strain in Marginally Twisted Bilayer Graphene

Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Strain-Induced Pseudomagnetic Fields in Twisted Graphene Nanoribbons

Electron Interactions in Strain-Induced Zero-Energy Flat Band in Twisted Bilayer Graphene Near the Magic Angle

The Coexistence of van Hove Singularities and Superlattice Dirac Points in a Slightly Twisted Graphene Bilayer

Strain effects on the electronic properties of a graphene wormhole

Evolution of the flat band and the role of lattice relaxations in twisted bilayer graphene