The Coexistence of van Hove Singularities and Superlattice Dirac Points in a Slightly Twisted Graphene Bilayer

Zhao-Dong Chu,Wen-Yu He,Lin He

DOI: https://doi.org/10.1103/PhysRevB.87.155419

2013-04-12

Abstract:We consider the electronic structure of a slightly twisted graphene bilayer and show the coexistence of van Hove singularities (VHSs) and superlattice Dirac points in a continuum approximation. The graphene-on-graphene moiré pattern gives rise to a periodic electronic potential, which leads to the emergence of the superlattice Dirac points due to the chiral nature of the charge carriers. Owning to the distinguishing real and reciprocal structures, the sublattice exchange even and odd structures of the twisted graphene bilayer (the two types of commensurate structures) result in two different structures of the superlattice Dirac points. We further calculate the effect of a strain on the low-energy electronic structure of the twisted graphene bilayer and demonstrate that the strain affects the position of the VHSs dramatically.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to study the electronic structure in slightly twisted bilayer graphene, especially the co - existence phenomenon of van Hove singularities (VHSs) and superlattice Dirac points. Specifically, the author explores the following aspects:

1. **Electronic Structure and the Formation of Superlattice Dirac Points**:
- In the case of a slightly twisted bilayer graphene, due to the inter - layer coupling, the Dirac cones are staggered, and two saddle points appear in the low - energy region, thus generating two low - energy van Hove singularities (VHSs).
- The periodic electronic potential caused by the graphene - graphene moiré pattern leads to the appearance of superlattice Dirac points.

2. **The Influence of Different Types of Commensurate Structures on Superlattice Dirac Points**:
- Research shows that bilayer graphene with sublattice exchange even (SE - even) and odd (SE - odd) structures has different real - space and reciprocal - space structures, which results in different superlattice Dirac point structures for them.
- In the SE - odd structure, the superlattice Dirac points appear at the center of the boundary of the superlattice Brillouin zone; while in the SE - even structure, there are more superlattice Dirac points, and in some cases, degeneracy lifting occurs.

3. **The Influence of Strain on the Low - Energy Electronic Structure**:
- The author further calculates the influence of strain on the low - energy electronic structure of slightly twisted bilayer graphene and finds that the strain significantly affects the position of VHSs. Tensile strain will lead to a decrease in the energy difference of VHSs, while compressive strain will increase the energy difference.

In summary, this paper aims to reveal the complex electronic structure characteristics in slightly twisted bilayer graphene, especially the co - existence of van Hove singularities and superlattice Dirac points and their behavior regulated by strain. These research results provide an important theoretical basis for understanding the electronic properties of bilayer graphene and guidance for experimental verification.

Formula part:
- The energy expression of the superlattice Dirac point is \( E_{SD}=\pm\frac{\hbar v_F|G|}{2} \), where \( \hbar \) is the reduced Planck constant, \( v_F \) is the Fermi velocity of graphene, and \( G \) is the reciprocal lattice vector of the periodic potential.
- The momentum - space displacement between adjacent Dirac points is \( \Delta K = 2K\sin(\theta/2) \), where \( \theta \) is the twist angle, \( K=\frac{4\pi}{3a} \), and \( a\approx0.246 \, \text{nm} \) is the carbon - atom spacing.