Abstract:The recently discovered flat electronic bands and strongly correlated and superconducting phases in magic-angle twisted bilayer graphene (MATBG)<a href="/articles/s41586-020-2255-3#ref-CR1">1</a>,<a href="/articles/s41586-020-2255-3#ref-CR2">2</a> crucially depend on the interlayer twist angle, θ. Although control of the global θ with a precision of about 0.1 degrees has been demonstrated<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="#ref-CR3">3</a>,<a href="#ref-CR4">4</a>,<a href="#ref-CR5">5</a>,<a href="#ref-CR6">6</a>,<a href="/articles/s41586-020-2255-3#ref-CR7">7</a>, little information is available on the distribution of the local twist angles. Here we use a nanoscale on-tip scanning superconducting quantum interference device (SQUID-on-tip)<a href="/articles/s41586-020-2255-3#ref-CR8">8</a> to obtain tomographic images of the Landau levels in the quantum Hall state<a href="/articles/s41586-020-2255-3#ref-CR9">9</a> and to map the local θ variations in hexagonal boron nitride (hBN)-encapsulated MATBG devices with relative precision better than 0.002 degrees and a spatial resolution of a few moiré periods. We find a correlation between the degree of θ disorder and the quality of the MATBG transport characteristics and show that even state-of-the-art devices—which exhibit correlated states, Landau fans and superconductivity—display considerable local variation in θ of up to 0.1 degrees, exhibiting substantial gradients and networks of jumps, and may contain areas with no local MATBG behaviour. We observe that the correlated states in MATBG are particularly fragile with respect to the twist-angle disorder. We also show that the gradients of θ generate large gate-tunable in-plane electric fields, unscreened even in the metallic regions, which profoundly alter the quantum Hall state by forming edge channels in the bulk of the sample and may affect the phase diagram of the correlated and superconducting states. We thus establish the importance of θ disorder as an unconventional type of disorder enabling the use of twist-angle gradients for bandstructure engineering, for realization of correlated phenomena and for gate-tunable built-in planar electric fields for device applications.

Twistronics in graphene-based van der Waals structures

Twistronics in Graphene, from Transfer Assembly to Epitaxy

Commensurate and Incommensurate Double Moiré Interference in Twisted Trilayer Graphene

Electronic properties of twisted multilayer graphene

Electric Field Tunable Correlated States and Magnetic Phase Transitions in Twisted Bilayer-Bilayer Graphene

Twist angle driven electronic structure evolution of twisted bilayer graphene

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Origin of the Magic Angle in Twisted Bilayer Graphene from Hybridization of Valence and Conduction Bands

Tunable correlation in twisted monolayer-trilayer graphene

Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices

Graphene Bilayers with a Twist

Mapping the twist-angle disorder and Landau levels in magic-angle graphene

Tunable Lattice Reconstruction, Triangular Network of Chiral One-Dimensional States, and Bandwidth of Flat Bands in Magic Angle Twisted Bilayer Graphene

In situ twistronics of van der Waals heterostructures

Recent Advances in Moiré Superlattice Structures of Twisted Bilayer and Multilayer Graphene

Imaging Electronic Correlations in Twisted Bilayer Graphene near the Magic Angle

Twist-Programmable Superconductivity in Spin-Orbit Coupled Bilayer Graphene

Tunable lattice reconstruction and bandwidth of flat bands in magic-angle twisted bilayer graphene

Visualizing the local twist angle variation within and between domains of twisted bilayer graphene

Twisted bilayer graphene reveals its flat bands under spin pumping

Competing Correlated States and Abundant Orbital Magnetism in Twisted Monolayer-Bilayer Graphene