Abstract:Electronic correlations could have significant impact on the material properties. They are typically pronounced for localized orbitals and enhanced in low-dimensional systems, so two-dimensional (2D) transition metal compounds could be a good platform to study their effects. Recently, a new class of 2D transition metal compounds, the MoSi2N4-family materials, has been discovered, and some of them exhibit intrinsic magnetism. Here, taking monolayer VSi2P4 as an example from the family, we investigate the impact of correlation effects on its physical properties, based on the first-principles calculations with the DFT+U approach. We find that different correlation strengths can drive the system into a variety of interesting ground states, with rich magnetic, topological, and valley features. With increasing correlation strength, while the system favors a ferromagnetic semiconductor state for most cases, the magnetic anisotropy and the band gap type undergo multiple transitions, and in the process, the band edges can form single, two, or three valleys for electrons or holes. Remarkably, there is a quantum anomalous Hall (QAH) insulator phase, which has a unit Chern number and has its chiral edge states polarized in one of the valleys. The boundary of the QAH phase corresponds to the half-valley semimetal state with fully valley polarized bulk carriers. We further show that for phases with the out-of-plane magnetic anisotropy, the interplay between spin-orbit coupling and orbital character of valleys enables an intrinsic valley polarization for electrons but not for holes. This electron valley polarization can be switched by reversing the magnetization direction, providing a new route of magnetic control of valleytronics. Our result sheds light on the possible role of correlation effects in the 2D transition metal compounds, and it will open new perspectives for spintronic, valleytronic, and topological nanoelectronic applications based on these materials.

Strain-engineering induced topological phase transitions and multiple valley states in Janus monolayer VCSiN4

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

Built-in electric field and strain tunable valley-related multiple topological phase transitions in monolayers

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Strain and U driven phase transitions in monolayer intrinsic ferrovalley NbIn2As2Se2

Strain and U driven phase transitions in monolayer intrinsic ferrovalleyNbIn2As2Se2

Effects of crystal deformation on spin-valley interplay and topological phase transition: a case study on VSi2X4 (X = N or P) monolayers

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Topological Refraction in Dual-Band Valley Sonic Crystals

Zeeman-field-induced Valley-Dependent Topological Phase Transitions on the Surface of a Topological Crystalline Insulator SnTe

Strain-induced Half-Valley Metals and Topological Phase Transitions in MBr2 Monolayers (M = Ru, Os)

Tuning Surface Dirac Valleys by Strain in Topological Crystalline Insulators

Superlattice Valley Engineering for Designer Topological Insulators

Sign-reversible valley-dependent Berry phase effects in 2D valley-half-semiconductors

Strain-engineering spin-valley locking effect in altermagnetic monolayer with multipiezo properties

Single-Layer ScI2: A Paradigm for Valley-Related Multiple Hall Effect

Correlation-driven topological and valley states in monolayer VSi 2 P 4

Quantum anomalous Hall effect and half-metal state of valley in VGe 2 N 4 monolayer

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer

Single-layer ScI 2 : A paradigm for valley-related multiple Hall effect

Single-Valley Engineering in Graphene Superlattices