Abstract:Photoferroelectric materials show great promise for developing alternative photovoltaics and photovoltaic-type non-volatile memories. However, the localized nature of the d orbital and large bandgap of most natural photoferroelectric materials lead to low electron/hole mobility and limit the realization of technologically practical devices. Antimony sulpho-iodide (SbSI) is a photoferroelectric material which is expected to have high electron/hole mobility in the ferroelectric state due to its non-local band dispersion and narrow bandgap. However, SbSI exhibits the paraelectric state close to room temperature. In this report, as a proof of concept, we explore the possibility to stabilize the SbSI ferroelectric phase above room temperature via mechanical strain engineering. We synthesized thin low-dimensional crystals of SbSI by chemical vapor deposition, confirmed its crystal structure with electron diffraction, studied its optical properties via photoluminescence spectroscopy and time-resolved photoluminescence spectroscopy, and probed its phase transition using temperature-dependent steady-state photoluminescence spectroscopy. We found that introducing external mechanical strain to these low-dimensional crystals may lead to an increase in their Curie temperature (by ∼60 K), derived by the strain-modified optical phase transition in SbSI and quantified by Kern formulation and Landau theory. The study suggests that strain engineering could be an effective way to stabilize the ferroelectric phase of SbSI at above room temperature, providing a solution enabling its application for technologically useful photoferroelectric devices.

Tuning of Circular Photogalvanic Effect of Surface States in the Topological Insulator Sb2Te3 Via Structural Deformation

Tuning of circular photogalvanic effect of surface states in the topological insulator Sb 2 Te 3 via structural deformation

Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2Te3 Via Spin Injection

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Tuning the physical properties of ultrathin transition-metal dichalcogenides via strain engineering

Strain engineering Dirac surface states in heteroepitaxial topological crystalline insulator thin films

In-plane Magnetic Field Induced Helicity Dependent Photogalvanic Effect on the Surface States of Topological Insulators (Bixsb1−x)2te3

Strain-Induced Enhancement Of Thermoelectric Performance Of Tis2 Monolayer Based On First-Principles Phonon And Electron Band Structures

Tuned electronic band structure and intensified phonon scattering of Ge2Sb2Te5 by strain engineering for thermoelectric performance

Tuning Surface Dirac Valleys by Strain in Topological Crystalline Insulators

Electric-Field Tuning Of The Surface Band Structure Of Topological Insulator Sb2te3 Thin Films

Design of Strain-Engineered Quantum Tunneling Devices for Topological Surface States

Helicity-dependent Photocurrent of the Top and Bottom Dirac Surface States of Epitaxial Thin Films of Three-Dimensional Topological Insulators Sb2Te3

Tailoring Kinetics on A Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2te3

Effect of strain on the Curie temperature and band structure of low-dimensional SbSI

Tunable Optoelectronic Properties of WS$_2$ by Local Strain Engineering and Folding

Strain Effect on Thermoelectric Performance of InSe Monolayer

Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi2(Te0.23Se0.77)3 Nanowires Grown by Chemical Vapor Deposition

Broadband Photodetectors Based on Topological Insulator Bi2Se3 Nanowire with Enhanced Performance by Strain Modulation Effect

Modification of the Hybridization Gap by Twisted Stacking of Quintuple Layers in a Three-Dimensional Topological Insulator Thin Film