Abstract:Orbital degrees of freedom can have pronounced effects on the fundamental properties of electrons in solids. In addition to influencing bandwidths, gaps, correlation strength and dispersion, orbital effects have also been implicated in generating novel electronic and structural phases, such as Jahn-Teller effect and colossal magnetoresistance. In this work, we show for the first time how the orbital nature of bands can result in non-trivial effects of strain on the band structure. We use scanning tunneling microscopy and quasiparticle interference imaging to study the effects of strain on the electronic structure of a heteroepitaxial thin film of a topological crystalline insulator, SnTe. We find a surprising effect where strain applied in one direction affects the band structure in the perpendicular direction. Our theoretical calculations indicate that this effect directly arises from the orbital nature of the conduction and valance bands. Our results imply that a microscopic model capturing strain effects on the band structure must include a consideration of the orbital nature of the bands.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How do the orbital effect and nanoscale strain interact in topological crystalline insulators (TCI) to affect the electronic band structure?** Specifically, the author aims to reveal how orbital characteristics lead to non - trivial effects of strain on the band structure, especially in the topological crystalline insulator SnTe. ### Main research questions: 1. **The influence of strain on the electronic band structure**: Through experiments and theoretical calculations, the author explored how different types of strain (such as biaxial strain, uniaxial strain, and shear strain) affect the electronic band structure of SnTe thin films, especially the position and properties of the Dirac cone. 2. **The role of the orbital effect**: The author paid special attention to the changes in orbital characteristics (such as the overlap of p - orbitals) under the influence of strain, and explained why the strain applied in one direction has the most significant impact on the Dirac cone in the perpendicular direction. 3. **The need for a microscopic model**: Based on the experimental results, the author pointed out that in order to accurately describe the influence of strain on the band structure, the changes in orbital characteristics must be considered, which provides a new perspective for constructing a more accurate microscopic model. ### Specific questions: - **The directional effect of strain**: Why does the strain applied in one direction cause a significant shift of the Dirac cone in another direction? - **The change in orbital overlap**: How does strain change the orbital overlap between adjacent atoms and then affect the band structure? - **The differences between strain types**: What are the specific differences in the effects of biaxial strain, uniaxial strain, and shear strain on the Dirac cone? ### Research background: Topological crystalline insulators (TCI) are a class of materials with unique surface states, which are protected by crystal symmetry. Different from traditional Z₂ topological insulators, the Dirac points of TCI are protected by discrete crystal symmetry. Therefore, by regulating the structural deformation of materials (such as strain), the properties of these surface states can be controlled without destroying the crystal symmetry. However, how to accurately understand the influence of strain on the TCI band structure is still an important scientific problem. ### Research significance: By revealing the complex relationship between the orbital effect and strain, this study provides a theoretical basis for developing new regulation methods, and may play an important role in future quantum computing and electronic device design.

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