Abstract:We study the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), host structures for quantum spin Hall insulators, by transport measurements and eight-band $\mathbf{k\cdot p}$ calculations. Using different substrates and buffer layer structures for crystal growth, we prepare two types of samples with vastly different strain conditions. CQWs with a nearly strain-free GaSb layer exhibit a resistance peak at the charge neutrality point that reflects the opening of a topological gap in the band-inverted regime. In contrast, for CQWs with 0.50\% biaxial tensile strain in the GaSb layer, semimetallic behavior indicating a gap closure is found for the same degree of band inversion. Additionally, with the tensile strain, the boundary between the topological and nontopological regimes is located at a larger InAs thickness. Eight-band $\mathbf{k\cdot p}$ calculations reveal that tensile strain in GaSb not only shifts the phase boundary but also significantly modifies the band structure, which can result in the closure of an indirect gap and make the system semimetallic even in the topological regime. Our results thus provide a global picture of the topological-nontopological phase diagram as a function of layer thicknesses and strain.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the influence of epitaxial strain on the electronic properties of InAs/GaSb composite quantum wells (CQWs), especially how it affects the topological - non - topological phase diagram and semimetallic behavior. Specifically: 1. **Effect of strain on the band structure**: Through experimental measurements and theoretical calculations, the changes in the band structure of InAs/GaSb CQWs under different strain conditions are studied. For example, the unstrained GaSb layer exhibits a resistance peak near the charge neutral point, reflecting the opening of the topological gap; while the GaSb layer with 0.50% biaxial tensile strain exhibits semimetallic behavior, indicating the closing of the band gap. 2. **Changes in the phase diagram**: It has been found that tensile strain not only changes the phase boundary but also significantly modifies the band structure, so that the system may become semimetallic even in the topological regime. This means that strain can effectively control the topological properties of the material. 3. **Combination of experimental verification and theoretical model**: Samples with different strain conditions are prepared by using different substrate and buffer layer structures, and combined with eight - band k·p theoretical calculations, the influence of strain on the electronic properties of epitaxially grown InAs/GaSb CQWs is verified. These results provide a new perspective for understanding previous research on InAs/GaSb CQWs and guidance for future experimental design. ### Formula representation Some of the key formulas involved in the paper include: - **Hybridization energy gap**: \[ \Delta_{\text{hybridization}} \] - This energy gap is the energy gap opened at the band crossing point when the electron and hole wave functions are coupled. - **Geometric capacitance**: - Front - gate capacitance $ C_F $ - Back - gate capacitance $ C_B $ - Coupling capacitance $ C_M $ between InAs and GaSb quantum well layers - **Quantum capacitance**: - Quantum capacitance of InAs layer $ C_{\text{InAs}} = \frac{e^2 m^*_{e,\text{InAs}}}{\pi \hbar^2} $ - Quantum capacitance of GaSb layer $ C_{\text{GaSb}} = \frac{e^2 m^*_{h,\text{GaSb}}}{\pi \hbar^2} $ - **Carrier density**: - Carrier density $ n_{\text{SdH}} $ obtained by FFT analysis - Electron density $ n_e $ and hole density $ n_h $ calculated from the equivalent circuit model These formulas and concepts help to explain how strain affects the electronic properties of InAs/GaSb CQWs and reveal the underlying physical mechanisms.

Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells

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