Abstract:We consider surface states in semiconductors with inverted-band structures, such as $\alpha$-Sn and HgTe. The main interest is the interplay of the effect of a strain of an arbitrary sign and that of the sample finite size. We consider, in particular, a model system comprised of a gapless semiconductor (e.g. HgTe or $\alpha$-Sn) of finite-width sandwiched between layers of a regular-band semiconductor (e.g. CdTe or InSb). We clarify the origin of various transitions that happen at a given strain with the change of the sample thickness, in particular the transition between the Dirac semimetal and quasi-3D (quantized) topological insulator. Our conclusion opposes those reached recently by the majority of researchers. We show that near the transition point the surface state cannot be treated as a truly topological one since the parameters of the problem are such that an appreciable overlap of the surface states' wave functions located at opposite boundaries occur. As a result, a spin-conserving, elastic impurity scattering between the states located at opposite boundaries will induce substantial backscattering and destroy the robustness of the surface state. For the k-p Kane model we derive hard-wall boundary conditions in the case when the regular-band materials form high barriers for the carriers of the inner inverted-band semiconductor (for example, CdTe/HgTe/CdTe and CdTe/$\alpha$-Sn/CdTe cases). We show that in this case the boundary conditions have universal and simple form and allow investigation of the realistic case of finite mass of the heavy-hole band, and comparison of the results obtained within the Kane and Luttinger models. In particular, a new type of surface states (wing states) developes with application of strain in the Kane model and is absent in the Luttinger model.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand a series of phase transition problems in topological insulators (especially topological insulators based on band - gap - inverted semiconductors) under the combined action of strain and size quantization. Specifically, the author focuses on: 1. **Interaction between strain and size quantization**: Study how, under given strain conditions, the transition from Dirac semimetal to quasi - three - dimensional (quantized) topological insulator occurs as the sample thickness changes. 2. **Nature and stability of surface states**: Explore whether the surface states can be regarded as true topological states near the phase transition point, and the influence of the overlap of these surface - state wave functions at the opposite boundaries on their stability. 3. **Physical mechanism of interface states**: Analyze the k - p Kane model with strain, derive hard - wall boundary conditions, and study the existence and characteristics of wing states in different models (such as the Kane model and the Luttinger model). 4. **Interpretation of experimental data**: Clarify the differences between existing ARPES (angle - resolved photoemission spectroscopy) experimental data and theoretical predictions, especially regarding the position of the Dirac point and the surface - state dispersion relation. ### Formula summary - **Hamiltonian matrix of the Kane model**: \[ \hat{H}=\begin{bmatrix} \epsilon_c&(2\hat{k}_x + i k_y)P&\sqrt{6}i P k_y / \sqrt{2}\\ (2\hat{k}_x - i k_y)P&\sqrt{6}\epsilon_v+\Delta/2-\hat{k}_x^2(\gamma + 2\tilde{\gamma})-k_y^2(\gamma-\tilde{\gamma})&-i\sqrt{3}\tilde{\gamma} k_y(2\hat{k}_x - i k_y)\\ -i P k_y / \sqrt{2}&i\sqrt{3}\tilde{\gamma} k_y(2\hat{k}_x + i k_y)&\epsilon_v-\Delta/2-\hat{k}_x^2(\gamma - 2\tilde{\gamma})-k_y^2(\gamma+\tilde{\gamma}) \end{bmatrix} \] - **Formula for the position of the Dirac point**: \[ \epsilon_{DP}=\frac{\Delta}{2\eta}+\frac{E_g E_{gb}}{E_g + E_{gb}(\eta - 1/2)} \] - **Energy gap formula for VP states**: \[ \Delta_{\pm}=2 E_g\left(\frac{e^{-\alpha(1/s\pm 2\rho P k_y / \sqrt{6} E_g)}}{s^2}\right) \] ### Conclusion Through theoretical analysis and model calculations, the author reveals the complex interaction between strain and size quantization in topological insulators and points out some misunderstandings in the existing literature. In particular, near the phase transition point, the overlap of the wave functions of the surface states will lead to elastic scattering, thus destroying the robustness of the surface states. In addition, the author also proposes new wing states. These states do not exist in the Luttinger model but are significantly manifested in the Kane model. These findings are helpful for better understanding experimental observations and provide theoretical guidance for future experimental designs.

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