Abstract:Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH systems realized so far, the decisive bottleneck preventing applications is the small bulk energy gap of less than 30 meV, requiring cryogenic operation temperatures in order to suppress detrimental bulk contributions to the edge conductance. Room-temperature functionalities, however, require much larger gaps. Here we show how this can be achieved by making use of a new QSH paradigm based on substrate-supported atomic monolayers of a high-Z element. Experimentally, the material is synthesized as honeycomb lattice of bismuth atoms, forming "bismuthene", on top of the wide-gap substrate SiC(0001). Consistent with the theoretical expectations, the spectroscopic signatures in experiment display a huge gap of ~0.8 eV in bismuthene, as well as conductive edge states. The analysis of the layer-substrate orbitals arrives at a QSH phase, whose topological gap - as a hallmark mechanism - is driven directly by the atomic spin-orbit coupling (SOC). Our results demonstrate how strained artificial lattices of heavy atoms, in contact with an insulating substrate, can be utilized to evoke a novel topological wide-gap scenario, where the chemical potential is located well within the global system gap, ensuring pure edge state conductance. We anticipate future experiments on topological signatures, such as transport measurements that probe the QSH effect via quantized universal conductance, notably at room temperature.

Engineering quantum spin Hall insulators by strained-layer heterostructures

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators.

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures

Time-Reversal Symmetry Protected Chiral Interface States Between Quantum Spin And Quantum Anomalous Hall Insulators

Robust Tunable Large-Gap Quantum Spin Hall States in Monolayer Cu2S on Insulating Substrates

Large-Gap Quantum Spin Hall Insulators in Two-Dimensional Hafnium Halides: Unraveling the Impact of Strain and Substrate

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Antiferromagnetic Quantum Spin Hall Insulators with High Spin Chern Numbers

Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells

Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm

Buried Dirac points in Quantum Spin Hall Insulators: Implications for edge transport and Majorana Kramer Pairs

Predicting quantum spin hall effect in graphene/GaSb and normal strain-controlled band structures

Transport in InAs/GaSb Quantum Spin Hall Insulators with High-K Dielectrics As the Top Barrier

Room Temperature Quantum Spin Hall Insulators with a Buckled Square Lattice

Exciton Condensation in Landau Levels of Quantum Spin Hall Insulators

Quantum Spin Hall State in Monolayer 1T'-Wte 2

Spin-Triplet Topological Excitonic Insulators in Two-dimensional Materials

Towards Quantum Spin Hall Effect in InAs/GaSb Quantum Wells

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb