Abstract:The sharpness of the interface between two semiconductors InAs and GaSb is crucial for the observation of a quantized Hall effect. Intermixing between the two materials at such an interface leads to a trapped two‐dimensional hole gas which suppresses Hall quantization and contributes an additional electrical conduction channel. The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes. This anomaly is a determining factor in the fundamental origin of the topological state in InAs/GaSb. Here, the coexistence of electrons and holes in InAs/GaSb is tied to the chemical sharpness of the interface. Magnetotransport, in samples of Mn‐doped InAs/GaSb cleaved from wafers grown at a spatially inhomogeneous substrate temperature, is studied. It is reported that the observation of quantum oscillations and a quantized Hall effect whose behavior, exhibiting coexisting electrons and holes, is tuned by this spatial nonuniformity. Through transmission electron microscopy measurements, it is additionally found that samples that host this co‐existence exhibit a chemical intermixing between group III and group V atoms that extends over a larger thickness about the interface. The issue of intermixing at the interface is systematically overlooked in electronic transport studies of topological InAs/GaSb. These findings address this gap in knowledge and shed important light on the origin of the anomalous behavior of quantum oscillations seen in this 2D topological insulator.

Transport in InAs/GaSb Quantum Spin Hall Insulators with High-K Dielectrics As the Top Barrier

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Engineering quantum spin Hall insulators by strained-layer heterostructures

Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb

Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells

Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators.

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Observation Of Edge Transport In The Disordered Regime Of Topologically Insulating Inas/Gasb Quantum Wells

Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures

Evidence for a topological excitonic insulator in InAs/GaSb bilayers

Robust Helical Edge Transport in GatedInAs/GaSbBilayers

Electrically Tuning Many-Body States In A Coulomb-Coupled Inas/Ingasb Double Layer

Quantum transport in an ambipolar InSb nanowire quantum dot device

Transport Properties of Sb2te3/Bi2te3 Topological Insulator Heterostructures

Two-Dimensional Quantum Transport in Free-Standing InSb Nanosheets.

Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

From insulator to quantum Hall liquid at low magnetic fields

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures