Abstract:The sharpness of the interface between two semiconductors InAs and GaSb is crucial for the observation of a quantized Hall effect. Intermixing between the two materials at such an interface leads to a trapped two‐dimensional hole gas which suppresses Hall quantization and contributes an additional electrical conduction channel. The interface of common III‐V semiconductors InAs and GaSb can be utilized to realize a two‐dimensional (2D) topological insulator state. The 2D electronic gas at this interface can yield Hall quantization from coexisting electrons and holes. This anomaly is a determining factor in the fundamental origin of the topological state in InAs/GaSb. Here, the coexistence of electrons and holes in InAs/GaSb is tied to the chemical sharpness of the interface. Magnetotransport, in samples of Mn‐doped InAs/GaSb cleaved from wafers grown at a spatially inhomogeneous substrate temperature, is studied. It is reported that the observation of quantum oscillations and a quantized Hall effect whose behavior, exhibiting coexisting electrons and holes, is tuned by this spatial nonuniformity. Through transmission electron microscopy measurements, it is additionally found that samples that host this co‐existence exhibit a chemical intermixing between group III and group V atoms that extends over a larger thickness about the interface. The issue of intermixing at the interface is systematically overlooked in electronic transport studies of topological InAs/GaSb. These findings address this gap in knowledge and shed important light on the origin of the anomalous behavior of quantum oscillations seen in this 2D topological insulator.

Electrically Tuning Many-Body States In A Coulomb-Coupled Inas/Ingasb Double Layer

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells

Resistive Signature of Excitonic Coupling in an Electron-Hole Double Layer with a Middle Barrier

Gate-Tuned Spontaneous Exciton Insulator in Double-Quantum Wells

Interface Dependent Coexistence of Two‐Dimensional Electron and Hole Gases in Mn‐doped InAs/GaSb

Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells

Modulating Charge Density Wave Order in a 1T-Tas2/black Phosphorus Heterostructure.

Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers

Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

Transport in InAs/GaSb Quantum Spin Hall Insulators with High-K Dielectrics As the Top Barrier

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators.

Quantum Transport and Field-Induced Insulating States in Bilayer Graphene Pnp Junctions

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells

Robust Helical Edge Transport in GatedInAs/GaSbBilayers

From insulator to quantum Hall liquid at low magnetic fields

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

Tunable Chiral and Helical Edge State Transport in a Magnetic Topological Insulator Bilayer

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Interplay of Chiral and Helical States in a Quantum Spin Hall Insulator Lateral Junction