Abstract:Submitted for the MAR11 Meeting of The American Physical Society Towards Quantum Spin Hall Effect in InAs/GaSb Quantum Wells IVAN KNEZ, RUI-RUI DU, Rice University, GERRARD SULLIVAN, Teledyne Scientific Co. — Recently, it has been proposed that inverted InAs/GaSb composite quantum wells (CQWs) should exhibit the Quantum Spin Hall Effect (QSHE), characterized by the energy gap in the bulk and gapless edge modes which are protected from backscattering by time reversal symmetry. We have successfully fabricated a double-gated device on high-quality MBE-grown InAs/GaAs CQWs in the inverted regime, in which we were able to vary the band structure via an electrical field, and tune the Fermi level into mini-gap regime. We observed clear evidence for an energy gap in the inverted regime, with values of the gap consistent with those theoretically predicted; however, the mini-gap exhibits residual conductivity of non-trivial origin, which complicates transport investigation of proposed edge channels. We note that the InAs surface states around the sample edges may play a role in the observed resistivity features. In ongoing work, we pursue Cooper pair injection experiments by proximity to an s-wave superconductor, which should provide a novel probe of the proposed helical edge modes. We will discuss our progress towards observing QSHE in this unique material system. The work at Rice was supported by grants from NSF, Keck Foundation, and Hackerman Advanced Research Program. Ivan Knez Rice University Date submitted: 12 Nov 2010 Electronic form version 1.4

Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells

Low-Field Quantum Hall Transport in an Electron Fabry-Perot Interferometer: Dependence of Constriction Filling on Front-Gate Voltage

Low-field Quantum Hall Transport in an Electron Fabry-Perot Interferometer

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb

Towards Quantum Spin Hall Effect in InAs/GaSb Quantum Wells

Perfect Andreev Reflection of Helical Edge Modes in InAs/GaSb Quantum Wells

Evidence For Helical Edge Modes In Inverted Inas/Gasb Quantum Wells

Transport in InAs/GaSb Quantum Spin Hall Insulators with High-K Dielectrics As the Top Barrier

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells

In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells

Robust Helical Edge Transport in GatedInAs/GaSbBilayers

Electrically Tuning Many-Body States In A Coulomb-Coupled Inas/Ingasb Double Layer

Quantum Anomalous Hall Effect In Magnetically Doped Inas/Gasb Quantum Wells

Observation of a Helical Luttinger-Liquid in InAs/GaSb Quantum Spin Hall Edges

Helical conducting edge states in narrow-gap semiconductors without band inversion

Quantum Hall effect in InAsSb quantum wells at elevated temperatures

Observation Of Edge Transport In The Disordered Regime Of Topologically Insulating Inas/Gasb Quantum Wells

Andreev reflection of helical edge modes in InAs/GaSb quantum spin Hall insulator.

Anomalously large resistance at the charge neutrality point in a zero-gap InAs/GaSb bilayer

Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence