Observation Of Edge Transport In The Disordered Regime Of Topologically Insulating Inas/Gasb Quantum Wells

Ivan Knez,Charles T Rettner,See-Hun Yang,Stuart S P Parkin,Lingjie Du,Rui-Rui Du,Gerard Sullivan
DOI: https://doi.org/10.1103/PhysRevLett.112.026602
IF: 8.6
2014-01-01
Physical Review Letters
Abstract:We observe edge transport in the topologically insulating InAs/GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall signal at zero magnetic fields, while for symmetric current paths, the conductance between the two mesoscopicly separated probes is quantized to 2e(2)/h. Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K.
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