Abstract:In an ideal InAs/GaSb bilayer of appropriate dimension, in-plane electron and hole bands overlap and hybridize, and a topologically nontrivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's potential landscape, however, is subject to microscopic perturbations originating from material imperfections. In this work, the effect of disorder on the electronic structure of InAs/GaSb (001) bilayers was studied by observing the temperature and magnetic-field dependence of the resistance of a dual-gated heterostructure gate-tuned through the inverted to normal gap regimes. Conduction with the electronic structure tuned to the inverted (predicted topological) regime and the Fermi level in the hybridization gap was qualitatively similar to behavior in a disordered two-dimensional system. The impact of charged impurities and interface roughness on the formation of topologically protected edge states and an insulating bulk was estimated. The experimental evidence and estimates of disorder in the potential landscape indicated that the potential fluctuations in state-of-the-art films are sufficiently strong such that conduction with the electronic structure tuned to the predicted topological insulator (TI) regime and the Fermi level in the hybridization gap was dominated by a symplectic metal phase rather than a TI phase. The implications are that future efforts must address disorder in this system, and focus must be placed on the reduction of defects and disorder in these heterostructures if a TI regime is to be achieved.

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators.

Engineering quantum spin Hall insulators by strained-layer heterostructures

Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Quantum Spin Hall Effect in Inverted InAs/GaSb Quantum Wells

Edge Mode of Inas/Gasb Quantum Spin Hall Insulator in Magnetic Field

Time-Reversal Symmetry Protected Chiral Interface States Between Quantum Spin And Quantum Anomalous Hall Insulators

Quantum Spin–quantum Anomalous Hall Effect with Tunable Edge States in Sb Monolayer-Based Heterostructures

Robust Helical Edge Transport in GatedInAs/GaSbBilayers

Towards Quantum Spin Hall Effect in InAs/GaSb Quantum Wells

Observation of a Helical Luttinger-Liquid in InAs/GaSb Quantum Spin Hall Edges

Tunable Chiral and Helical Edge State Transport in a Magnetic Topological Insulator Bilayer

Topological States and Interplay Between Spin-Orbit and Zeeman Interactions in a Spinful Su-Schrieffer-Heeger Nanowire

Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures

Gate-Tuned Spontaneous Exciton Insulator in Double-Quantum Wells

Transport in InAs/GaSb Quantum Spin Hall Insulators with High-K Dielectrics As the Top Barrier

Towards Layer-Selective Quantum Spin Hall Channels in Weak Topological Insulator Bi4Br2I2

Exciton Condensation in Landau Levels of Quantum Spin Hall Insulators

Helical conducting edge states in narrow-gap semiconductors without band inversion

Effective Spin Dephasing Mechanism in Confined Two-Dimensional Topological Insulators

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells