Abstract:The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor 1 – 4 . In this scheme, ‘on’ is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator 5 – 9 , and ‘off’ is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits 4 , which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far 6 – 8 . Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases 3 , 10 – 16 . Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal 3 , 17 Na 3 Bi are two-dimensional topological insulators with bulk bandgaps greater than 300 millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens it as a conventional gap of 90 millielectronvolts. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy at room temperature (25 millielectronvolts), suggest that ultrathin Na 3 Bi is suitable for room-temperature topological transistor operation.

Electric-field-induced Z2 topological phase transition in strained single bilayer Bi(111)

Controlling quantum spin Hall state via strain in various stacking bilayer phosphorene

Strain Effects in Topological Insulators: Topological Order and the Emergence of Switchable Topological Interface States in Sb$_2$Te$_3$/Bi$_2$Te$_3$ Heterojunctions

Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiS 2 Te 2

Pressure Induced Topological Phase Transition in Layered Bi2S3

Strain-induced Semiconductor to Metal Transition in MA2Z4 Bilayers (M = Ti, Cr, Mo; A = Si; Z = N, P)

Manipulating Topological Phase Transition by Strain.

Artificial Gravity Field, Astrophysical Analogues, and Topological Phase Transitions in Strained Topological Semimetals

Tunable topological electronic structures in Sb(111) bilayers: A first-principles study

Strain-gradient induced topological transition in bent nanoribbons of the Dirac semimetal Cd 3 As 2

Strain-gradient Induced Topological Transition in Bent Nanoribbons of the Dirac Semimetal Cd3As2

Room-Temperature Topological Phase Transition in Quasi-One-Dimensional Material Bi_4I_4

Strain-induced topological phase transition in two-dimensional platinum ditelluride

A field-induced reentrant insulator state of a gap-closed topological insulator (Bi_{1-x}Sb_x) in quantum-limit states

Electric-field-tuned topological phase transition in ultrathin Na 3 Bi

Uniaxial strain-induced phase transition in the 2D topological semimetal IrTe2

Topological phase transition in a narrow bandgap semiconductor nanolayer

Strain-induced Quantum Topological Phase Transitions in Na3Bi

Quantum Phase Transitions in Sn Bilayer Based Interfacial Systems by an External Strain

Experimental Evidence of the Thickness- and Electric-Field-dependent Topological Phase Transitions in Topological Crystalline Insulator SnTe(111) Thin Films

Engineering a Topological Phase Transition in Β-Inse Via Strain