Abstract:Abstract Valleytronics uses valleys, a novel quantum degree of freedom, to encode information. It combines other degrees of freedom, such as charge and spin, to produce a more comprehensive, stable, and efficient information processing system. Valleytronics has become an intriguing field in condensed matter physics due to the emergence of new two-dimensional materials in recent years. However, in nonmagnetic valleytronic materials, the valley polarization is transient and the depolarization occurs once the external excitation is withdrawn. Introduction of magnetic field is an effective approach to realizing the spontaneous valley polarization by breaking the time-reversal symmetry. In hexagonal magnetic valleytronic materials, the inequivalent valleys at the K and – K ( K ′) Dirac cones have asymmetric energy gaps and Berry curvatures. The time-reversal symmetry in nonmagnetic materials can be broken by applying an external magnetic field, adding a magnetic substrate or doping magnetic atoms. Recent theoretical studies have demonstrated that valleytronic materials with intrinsic ferromagnetism, now termed as ferrovalley materials, exhibit spontaneous valley polarization without the need for external fields to maintain the polarization. The coupling of the valley and spin degrees of freedom enables stable and unequal distribution of electrons in the two valleys and thus facilitating nonvolatile information storage. Hence, ferrovalley materials are promising materials for valleytronic devices. In this review, we first briefly overview valleytronics and its related properties, the ways to realize valley polarization in nonmagnetic valleytronic materials. Then we focus on the recent developments in two-dimensional ferrovalley materials, which can be classified according to their molecular formula and crystal structure: MX 2 ; M(XY) 2 , M(XY 2 ) and M(XYZ) 2 ; M 2 X 3 , M 3 X 8 and MNX 6 ; MNX 2 Y 2 , M 2 X 2 Y 6 and MNX 2 Y 6 ; and the Janus structure ferrovalley materials. In the inequivalent valleys, the Berry curvatures have opposite signs with unequal absolute values, leading to anomalous valley Hall effect. When the valley polarization is large, the ferrovalleys can be selectively excited even with unpolarized light. Intrinsic valley polarization in two-dimensional ferrovalley materials is of great importance. It opens a new avenue for information-related applications and hence is under rapid development.

Promising valleytronic materials with strong spin-valley coupling in two-dimensional MN 2 X 2 (M = Mo, W; X = F, H)

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer

Spin-valley Coupled Valleytronics in Two-Dimensional Transitional Metal Dichalcogenides

Abundant Valley-Polarized States in Two-Dimensional Ferromagnetic Van Der Waals Heterostructures

Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides

Valleytronics in two-dimensional magnetic materials

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Valley Physics and Anomalous Valley Hall Effect in Single-Layer H -MNX (M = Ti, Zr, Hf; X = Cl, Br)

Large and Controllable Spin-Valley Splitting in Two-Dimensional WS2/h-VN Heterostructure

Coupling the valley degree of freedom to antiferromagnetic order

Stable valley-layer coupling and design principle in 2D lattice

Spontaneous valley polarization in two-dimensional organometallic lattices

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH

Strain‐Valley Coupling in 2D Antiferromagnetic Lattice

Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves

Large valley splitting induced by spin-orbit coupling effects in monolayer Hf3N2O2

Spin-Valley Depolarization in Van Der Waals Heterostructures

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi 2 N 4 /MnPS 3 Heterostructure

Valleytronics in transition metal dichalcogenides materials

Valley Pseudospin in Monolayer MoSi2N4 and MoSi2As4