Abstract:Superior to ferromagnetic (FM) valleytronics, antiferromagnetic (AFM) counterpart exhibits ultradense and ultrafast potential due to their intrinsic advantages of zero stray field, terahertz dynamics, and compensated moment of antiferromagnets. However, the physics of spontaneous valley polarization is mainly rooted in FM hexagonal lattices and is rarely used to explore the simultaneous spin and valley polarizations in AFM materials. Here, we propose a general stacking way to achieve valley polarization in AFM bilayer systems. The hexagonal ferrovalley material is used as the basic building unit, and then the space-inversion centrosymmetric bilayer system with interlayer AFM ordering is constructed by horizontal mirror and 2-fold rotational operations, which can exhibit spontaneous valley polarization. In this construction process, the rarely explored \textit{layer-locked hidden valley polarization}, hidden Berry curvature and layer Hall effect are involved, and an out-of-plane electric field can be used to detect hidden valley polarization and to realize layer-locked anomalous valley Hall effect. We use three examples to illustrate our proposal. Firstly, the Janus GdBrI is used to prove concepts and effects involved in our design process. Secondly, the $\mathrm{RuBr_2}$ is used to demonstrate other phenomena, including valley polarization transition and \textit{near-ideal quantum spin Hall insulator}. Finally, we use our design principles to understand the valley polarization of experimentally synthesized MnSe from a new perspective. Our works establish a robust general scheme to achieve valley polarization in AFM bilayer systems, thereby opening up new avenues for AFM valleytronics.

Spin–valley splitting and spontaneous valley polarization in antiferromagnetic Mn2P2X3Y3 monolayers

Multifield tunable valley splitting and anomalous valley Hall effect in two-dimensional antiferromagnetic MnBr

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate

Spontaneous valley polarization in two-dimensional organometallic lattices

Ferrovalleytricity in a two-dimensional antiferromagnetic lattice

Valley contrasting bulk photovoltaic effect in antiferromagnetic MnPSe$_3$ monolayer

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi 2 N 4 /MnPS 3 Heterostructure

Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Magnetically and electrically controllable valley splittings in MXene monolayers

Proposal of a general scheme: valley polarization in antiferromagnetic bilayer systems

Anomalous valley Hall effect in antiferromagnetic monolayers

Single-valley state in a two-dimensional antiferromagnetic lattice

Promising valleytronic materials with strong spin-valley coupling in two-dimensional MN 2 X 2 (M = Mo, W; X = F, H)

Valley polarization in 2D tetragonal altermagnetism

Valley Spin-Polarization of MoS2 Monolayer Induced by Ferromagnetic Order in an Antiferromagnet

Giant spin-valley polarization and multiple Hall effect in functionalized bismuth monolayers

Stacking order modulated anomalous valley Hall effect in antiferromagnetic MXene

Magnetically and electrically controllable valley splittings in MXene Co2CF2 monolayers

Isovalent alloying assisted anomalous valley Hall effect in hexagonal antiferromagnetic monolayer

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer