Abstract:The reversible electric‐field and stacking effect on valley‐ and spin‐polarized electrons of AFM Janus FeClF bilayer is investigated to probe the interplay of spin, valley and layer degrees of freedom. Spontaneous PMA, concurrent and controllable BMS and AVHE by reversible electric‐field suggest the promising design of ferrovalley BMSs and application of multifunctional valleytronics and spintronics for 2D Janus ferrum dichlorides. Valley polarization from broken inversion symmetry provides a new degree of freedom for carriers, bipolar magnetic semiconductor (BMS) generates a purely spin‐polarized current under a gate voltage, but few systems possess the coexistence of valley polarization and BMS. Based on the recent experimental FeCl2 flakes, reversible electric‐field effect on the valley‐ and spin‐polarized Janus FeClF bilayer with different stackings are investigated herein. Janus FeClF bilayers in all three stacks possess interlayer antiferromagnetic (AFM) and intralayer ferromagnetic (FM) couplings. The most stable A (Cl‐Fe‐F‐Cl‐Fe‐F) stack possesses concurrent and spontaneous BMS nature and valley polarization with perpendicular magnetic anisotropy (PMA), while B (Cl‐Fe‐F‐F‐Fe‐Cl) and C (F‐Fe‐Cl‐Cl‐Fe‐F) stacks exhibit AFM semiconductor characters without valley polarization. Electric‐field achieves a transition of BMS and AFM semiconductor. Large ferrovalley (≈108 meV) exists and is mainly contributed by Fe‐dxy and dx2−y2 orbitals. With the out‐of‐plane to in‐plane to out‐of‐plane transition of the easy axis, anomalous valley Hall effect (AVHE) can be manipulated to presence and disappearance by perpendicular electric‐field, indicating the valley switch effect (VSE). The coexisting BMS feature, PMA, AVHE and VSE make Janus FeClF bilayer a promising candidate for multifunctional valleytronic and spintronic applications, favoring broad explorations for the low‐dimensional Janus family.

Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Valley polarization in 2D tetragonal altermagnetism

Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors

Ferrovalleytricity in a two-dimensional antiferromagnetic lattice

Spontaneous valley polarization in two-dimensional organometallic lattices

Proposal of a general scheme: valley polarization in antiferromagnetic bilayer systems

Bilayer Stacking Ferrovalley without Breaking Time-Reversal Symmetry

Electrical control of the anomalous valley Hall effect in antiferrovalley bilayers

Strain-induced valley polarization, topological states, and piezomagnetism in two-dimensional altermagnetic V$_2$Te$_2$O, V$_2$STeO, V$_2$SSeO, and V$_2$S$_2$O

Valley polarization in twisted altermagnetism

Coexisting Magnetism, Ferroelectric, and Ferrovalley Multiferroic in Stacking-Dependent Two-Dimensional Materials

Stacking order modulated anomalous valley Hall effect in antiferromagnetic MXene

Concepts of ferrovalley material and anomalous valley Hall effect

Magnetically and electrically controllable valley splittings in MXene Co2CF2 monolayers

Magnetically and electrically controllable valley splittings in MXene monolayers

Electric‐Field‐ and Stacking‐Tuned Antiferromagnetic FeClF Bilayer: The Coexistence of Bipolar Magnetic Semiconductor and Anomalous Valley Hall Effect

Coexistence and Coupling of Multiple Ferroic Orders in Van Der Waals Monolayers

Intrinsic Valley Polarization and Anomalous Valley Hall Effect in Single-Layer 2H-Fecl2

Bilayer Stacking Ferrovalley Materials Without Breaking Time-Reversal and Spatial-Inversion Symmetry

Coupling the valley degree of freedom to antiferromagnetic order