Experimental observation of coupled valley and spin Hall effect in p-doped WSe2 devices

Terry Y.T. Hung,Avinash Rustagi,Shengjiao Zhang,Pramey Upadhyaya,Zhihong Chen

DOI: https://doi.org/10.48550/arXiv.1908.01396

2019-08-05

Abstract:Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have successfully switched magnets with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) through spin orbit torque (SOT) mechanism. It is generally accepted that PMA magnets are preferred over IMA magnets in data storage applications owing to their large thermal stability even at ultra scaled dimensions. However, SOT switching of PMA magnets by conventional GSHE materials requires either a small external magnetic field, a local dipolar field, or introducing tilted anisotropy to break the symmetry with respect to the magnetization. To deterministically switch a PMA without any additional assistance, nonconventional GSHE materials that can generate spins with polarization perpendicular to the surfaces are needed. Several monolayer transition metal dichalcogenides (TMDs) have been predicted to generate such out of plane spins due to their 2D nature and unique band structures. Interestingly, opposite spins are locked to their respective sub-band in each K valley of the TMD valence band with substantially large energy splitting, which enables polarized spins to be accessible through electrical gating and spatially separated by electric field through the valley Hall effect (VHE). Therefore, spatial separation and accumulation of spins in these 2D TMDs are uniquely referred to as coupled valley and spin Hall effect. Here, we report an experiment of electrical generation of spin current with out of plane polarization in monolayer WSe2 and detection of spin signals through a nonlocal spin valve structure built on a lateral graphene spin diffusion channel that partially overlaps with WSe2.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to generate and detect spin currents with spin polarization perpendicular to the surface in two - dimensional transition metal dichalcogenide (TMDs) materials, especially in monolayer WSe₂, by electrical methods. Specifically, the authors aim to prove:

1. **Coupling of Valley Hall Effect (VHE) and Spin Hall Effect (SHE)**: By using the Valley Hall Effect (VHE) in monolayer WSe₂, spatially separated spin accumulations can be achieved, and these spins have a polarization direction perpendicular to the surface.

2. **Efficient Switching of Perpendicular Magnetic Anisotropy (PMA) Magnets**: Traditional Giant Spin Hall Effect (GSHE) materials require additional external magnetic fields or special designs when switching PMA magnets. However, by using the vertically polarized spin current generated by monolayer WSe₂, PMA magnets can be switched more efficiently without additional assistance.

3. **Realization of All - Electrical Devices**: Construct a device that generates and detects vertically polarized spin currents entirely based on electrical methods, which provides the possibility for future development of spin - orbit - torque random - access memory (SOT - RAM) based on PMA and other new spintronic devices.

### Main Contributions

- **First Experimental Verification**: It has been experimentally proven that vertically polarized spin currents can be generated in monolayer WSe₂ by electrical methods, and these spins can be spatially separated and detected.

- **Innovative Device Design**: A hybrid device containing WSe₂ and graphene has been designed to generate and detect spin currents. Through the non - local spin valve structure, the detection of spin signals has been achieved.

- **Theoretical Model Support**: Through theoretical modeling and simulation, the correctness of the experimental results has been verified, and the relationship between spin polarization and the Valley Hall Effect has been explained.

### Formula Summary

1. **Anomalous Velocity Equation**:
\[
\mathbf{v}=\frac{e}{\hbar}\mathbf{E}\times\Omega(\mathbf{k})
\]
where \( \mathbf{k} \) is the wave vector, \( \mathbf{E} \) is the electric field, \( e \) is the elementary charge, \( \hbar \) is the reduced Planck constant, and \( \Omega(\mathbf{k}) \) is the Berry curvature.

2. **Relationship between Spin Polarization and Valley**:
\[
s(K)= - s(-K)
\]
that is, time - reversal symmetry causes the Berry curvatures of adjacent \( K \) valleys to have opposite signs, thus generating spin polarization.

3. **Valley Hall Conductivity**:
\[
\sigma_{xy}^{VH}(\mu)=\sum_{\tau,\alpha,s_z}\frac{e^2}{\hbar}\int\frac{d\mathbf{k}}{(2\pi)^2}\Omega(\mathbf{k})f(E - \mu)
\]
where \( \mu \) is the chemical potential, \( \alpha=\pm1 \) represents the conduction/valence band, \( s_z = \pm 1 \) represents the spin polarization direction, and \( \tau=\pm1 \) represents the valley index \( K/K' \).

4. **Relationship between Non - local Voltage and Applied Magnetic Field**:
\[
V_{nl}(B_z)=
\begin{cases}
- V_{nl0}\frac{B_z}{4\pi M_s}&\text{when }|B_z|<4\pi M_s\\
- V_{nl0}\text{sign}(B_z)&\text{when }|B_z|>4\pi M_s
\end{cases}
\]

Through these studies, the authors not only verified the theoretical predictions but also provided new ideas and technical means for future spintronics and quantum device applications.