Abstract:Two-dimensional (2D) intrinsic ferromagnetic (FM) materials play a crucial role in spintronics. Through a systematic research of the 2H-MoS2 bilayer (BL) with self-intercalation (SI) of Mo atom, we have discovered that SI can introduce a long-range magnetic order, as Mo-SI atoms lose electrons. The MoS2 BLs (MomSn) with self-intercalated Mo (Mo-SI) atoms show antiferromagnetic (AFM) order under a high concentration of Mo-SI atoms, where the direct exchange interaction dominates over the superexchange interaction. MomSn becomes half-metal (HM) with interlayer FM order after Mo's self-intercalation, under lower Mo-SI atom concentrations, independent of the stacking orders. Mo9S16-AA exhibits HM with FM order, with a corresponding Curie temperature (T-c) of 35 K. MomSn-AA and AB stackings with a lower concentration of Mo-SI atoms transform into half semiconductors (HSCs). Moreover, the magnetic anisotropy energies (MAEs) of Mo9S16-AA and AB stackings are -0.080 and -1.06 meV/f.u., suggesting that the magnetic easy axis (EA) of MomSn tends to the [100] direction, regardless of the stacking orders. However, the MAEs of MomSn-AA and AB stackings differ due to variations in the hybridization interaction between Mo's d orbitals. The formation energies of MomSn change with the chemical potential of S (mu(s)) and the concentration of Mo-SI atoms. Furthermore, the formation energy (epsilon(f)) monotonically increases as the concentration of Mo-SI monotonically increases. Additionally, MomSn with Mo-SI atoms could be synthesized under a higher chemical potential of Mo atom (mu(Mo)). The MomSn-AB stackings are always more stable than the AA stackings. Self-intercalated MomSn exhibits good dynamic and thermal stability at 300 and 600 K, respectively. These findings suggest a promising approach to introducing a modulated long-range FM order and electromagnetic properties into 2H-MoS2 and other transition metal dichalcogenides (TMDs).

Key electronic parameters of 2H-stacking bilayer MoS2 on sapphire substrate determined by terahertz magneto-optical measurement in Faraday geometry

Electronic properties of 2{\it H}-stacking bilayer MoS$_2$ measured by terahertz time-domain spectroscopy

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Tailing the Magnetoelectric Properties of 2H-Mos2 by Engineering Covalently Bonded Mo Self-intercalation: Ferromagnetic Materials

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Interlayer Coupling Dependent Discrete H → T′ Phase Transition in Lithium Intercalated Bilayer Molybdenum Disulfide

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Band alignments, conduction band edges and intralayer bandgap renormalisation in MoSe2/WSe2 heterobilayers

Magneto-optical conductivity of monolayer transition metal dichalcogenides in the presence of proximity-induced exchange interaction and external electrical field

High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices

Two-dimensional Mo decorated borophenes: high critical temperature, large magnetic anisotropy, and stacking-dependent magnetism

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Grain Boundaries and Tilt-Angle-Dependent Transport Properties of a 2D Mo2C Superconductor

High-Energy Electronic Excitations In A Bulk Mos2 Single Crystal

Synthesis and characterization of uniform 3R phase bilayer MoS 2 on sapphire

Effect of Stacking Type and Magnetic Moment in Spin-Valley Polarized MoS2–MoSe2 Heterobilayers

Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance

Time-resolved ARPES Determination of a Quasi-Particle Band Gap and Hot Electron Dynamics in Monolayer MoS 2

Fast and Controllable Synthesis of AB-stacked Bilayer MoS2 for Photoelectric Detection

Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate