Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs) heterojunctions are the basic building blocks for constructing next-generation optoelectronic devices. However, the controllable synthesis of 2D TMDs lateral heterojunctions still face great challenges because of the difficulty in independently controlling the growth of each monomer material. Herein, we reported a novel synthesis strategy that combines the hydrogen (H2)-triggered one-pot chemical vapor deposition growth with liquid-phase precursor predeposition, which can precisely control the precursor supply, to synthesize 2D MoS2–WS2 lateral heterojunction nanosheets. The growth process consists of two independent stages; uniform MoS2 seed crystals were first grown on sapphire substrate with Mo solution precursor predeposited under argon (Ar) condition, and then H2 was introduced into the growth system to trigger the growth of WS2, allowing WS2 to seamlessly grow around MoS2. By using this approach, large-area MoS2–WS2 lateral heterojunctions with uniform domain size, clean surface, high crystallinity, and narrow interface structure were obtained. Transient absorption spectroscopy indicates that the photocarriers can effectively separate at the heterojunction interface. Moreover, prominent rectification characteristics and sensitive photoresponse were achieved on the heterojunction-based devices. This study provides a reliable method for the controllable synthesis of large-scale 2D heterostructures, which is of great significance for their device applications.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.1c00890?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.1c00890</a>.Additional characterization including OM, STEM, absorption spectra, and electrical and photoelectrical properties (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.1c00890/suppl_file/an1c00890_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Fast and Controllable Synthesis of AB-stacked Bilayer MoS2 for Photoelectric Detection

Fast and controllable synthesis of AB-stacked bilayer MoS 2 for photoelectric detection

One-Step Synthesis of a Bilayer MoS2/WS2 Lateral Heterojunction for Photoelectric Detection

One-Step Synthesis of a Bilayer MoS 2 /WS 2 Lateral Heterojunction for Photoelectric Detection

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Rapid and large-scale synthesis of MoS2via ultraviolet laser-assisted technology for photodetector applications

Large-Scale Multilayer MoS2 Nanosheets Grown by Atomic Layer Deposition for Sensitive Photodetectors

A New Strategy to Improve the Performance of MoS2-based 2D Photodetector by Synergism of Colloidal CuInS2 Quantum Dots and Surface Plasma Resonance of Noble Metal Nanoparticles

Layer Number and Stacking Engineering of MoS2 Crystals for High-Performance Polarization-Sensitive Photodetector

Growth of Monolayer and Bilayer MoS2 Through the Solution Precursor for High-Performance Photodetectors

Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces

Synthesis of Large-Area Uniform MoS 2 –WS 2 Lateral Heterojunction Nanosheets for Photodetectors

Stacking-mode Confined Growth of 2H-Mote2/mos2 Bilayer Heterostructures for UV–vis–IR Photodetectors

Layer-by-Layer Growth of AA-Stacking MoS 2 for Tunable Broadband Phototransistors

Ultrafast Charge Transfer 2D MoS2/Organic Heterojunction for Sensitive Photodetector

A fast 2D MoS2 photodetector with ultralow contact resistance

A modified CVD method for the synthesis of monolayer MoS2 and photoelectric improvement by HfO2 passivation

Large-scale and stacked transfer of bilayers MoS2 devices on a flexible polyimide substrate

Synthesis and characterization of uniform 3R phase bilayer MoS 2 on sapphire

Scalable Fabrication of Atomically Thin Monolayer MoS2 Photodetectors

Pulsed Laser Deposited MoS2 for the Fabrication of MoS2/Graphene Photodetector