Abstract:This work reports a high‐reproducible, high‐efficient epitaxial growth method of wafer‐scale (over two inches) monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by designing a "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio. 2D semiconducting transition‐metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next‐generation transistors. To meet the industry needs, large‐scale production of single‐crystal monolayer TMDs in highly reproducible and energy‐efficient manner is critically significant. Herein, it is reported that the high‐reproducible, high‐efficient epitaxial growth of wafer‐scale monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by virtue of a deliberately designed "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short‐distance transport, and moderate deposition of metal precursor on a wafer‐scale substrate, affording high‐efficient and high‐reproducible growth of wafer‐scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer‐scale single‐crystal 2D materials, thus propelling their practical applications in highly integrated high‐performance nanoelectronics and optoelectronics.

Synthesis and characterization of uniform 3R phase bilayer MoS 2 on sapphire

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition

Monolayer MoS 2 on sapphire: an azimuthal reflection high-energy electron diffraction perspective

Monolayer MoS2 on Sapphire: an Azimuthal Reflection High-Energy Electron Diffraction Perspective

Batch fabrication of MoS2 devices directly on growth substrates by step engineering

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Highly Reproducible Epitaxial Growth of Wafer‐Scale Single‐Crystal Monolayer MoS2 on Sapphire

Oriented lateral growth of monolayer MoS2 mediated by highly-oriented MoO2 nanorods on sapphire

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Fast and controllable synthesis of AB-stacked bilayer MoS 2 for photoelectric detection

Growth of 2H Stacked WSe2 Bilayers on Sapphire

Fast and Controllable Synthesis of AB-stacked Bilayer MoS2 for Photoelectric Detection

Batch Fabrication of MoS 2 Devices Directly on Growth Substrates by Step Engineering

Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS 2 Films

MoS2-OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates

Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Impact of Sapphire Step Height on the Growth of Monolayer Molybdenum Disulfide

Unravelling orientation distribution and merging behavior of monolayer MoS2 domains on sapphire