Abstract:This work reports a high‐reproducible, high‐efficient epitaxial growth method of wafer‐scale (over two inches) monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by designing a "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio. 2D semiconducting transition‐metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next‐generation transistors. To meet the industry needs, large‐scale production of single‐crystal monolayer TMDs in highly reproducible and energy‐efficient manner is critically significant. Herein, it is reported that the high‐reproducible, high‐efficient epitaxial growth of wafer‐scale monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by virtue of a deliberately designed "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short‐distance transport, and moderate deposition of metal precursor on a wafer‐scale substrate, affording high‐efficient and high‐reproducible growth of wafer‐scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer‐scale single‐crystal 2D materials, thus propelling their practical applications in highly integrated high‐performance nanoelectronics and optoelectronics.

Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Critical Role of Surface Termination of Sapphire Substrates in Crystallographic Epitaxial Growth of MoS2 Using Inorganic Molecular Precursors.

Impact of Sapphire Step Height on the Growth of Monolayer Molybdenum Disulfide

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Importance of the Substrate's Surface Evolution During the MOVPE Growth of 2D-Transition Metal Dichalcogenides.

Highly Reproducible Epitaxial Growth of Wafer‐Scale Single‐Crystal Monolayer MoS2 on Sapphire

Oriented lateral growth of monolayer MoS2 mediated by highly-oriented MoO2 nanorods on sapphire

Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

High-Temperature In Situ Investigation of Chemical Vapor Deposition to Reveal Growth Mechanisms of Monolayer Molybdenum Disulfide

Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS2.

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices.

Na-assisted Fast Growth of Large Single-Crystal MoS2 on Sapphire.

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier

Monolayer MoS2 on Sapphire: an Azimuthal Reflection High-Energy Electron Diffraction Perspective