Impact of Sapphire Step Height on the Growth of Monolayer Molybdenum Disulfide

Jie Lu,Miaomiao Zheng,Jinxin Liu,Yufeng Zhang,Xueao Zhang,Weiwei Cai

DOI: https://doi.org/10.3390/nano13233056

IF: 5.3

2023-11-30

Nanomaterials

Abstract:Although the synthesis of molybdenum disulfide (MoS2) on sapphire has made a lot of progress, how the substrate surface affects the growth still needs to be further studied. Herein, the impact of the sapphire step height on the growth of monolayer MoS2 through chemical vapor deposition (CVD) is studied. The results show that MoS2 exhibits a highly oriented triangular grain on a low-step (0.44–1.54 nm) substrate but nanoribbons with a consistent orientation on a high-step (1.98–3.30 nm) substrate. Triangular grains exhibit cross-step growth, with one edge parallel to the step edge, while nanoribbons do not cross steps and possess the same orientation as the step. Scanning electron microscopy (SEM) reveals that nanoribbons are formed by splicing multiple grains, and the consistency of the orientation of these grains is demonstrated with a transmission electron microscope (TEM) and second-harmonic generation (SHG). Furthermore, our CP2K calculations, conducted using the generalized gradient approximation and the Perdew–Burke–Ernzerhof (PBE) functional with D3 (BJ) correction, show that MoS2 domains prefer to nucleate at higher steps, while climbing across a higher step is more difficult. This work not only sheds light on the growth mechanism of monolayer MoS2 but also promotes its applications in electrical, optical, and energy-related devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry

What problem does this paper attempt to address?

The paper primarily explores the impact of sapphire substrate step height on the growth of monolayer molybdenum disulfide (MoS₂). The study uses chemical vapor deposition (CVD) to grow monolayer MoS₂ on sapphire substrates with different step heights and analyzes their morphological characteristics. Specifically, the researchers obtained low-step (0.44–1.54 nm) sapphire substrates (LSS) and high-step (1.98–3.30 nm) sapphire substrates (HSS) through different annealing processes. Highly oriented triangular grains were grown on LSS, while directionally consistent nanoribbon structures were formed on HSS. The triangular grains exhibited the characteristic of growing across steps, with one edge parallel to the step edge. In contrast, the nanoribbon structures did not cross the steps and were consistent with the step direction. Further research found that these nanoribbons were actually composed of multiple grains with the same crystal orientation, indicating that despite being composed of multiple grains, these nanoribbons are essentially single-crystal structures. This was confirmed by characterization methods such as scanning electron microscopy (SEM), transmission electron microscopy (TEM), and second harmonic generation (SHG). In terms of theoretical calculations, the researchers used CP2K software to perform density functional theory (DFT) calculations. The results showed that higher step heights promote the nucleation of monolayer MoS₂ but inhibit growth across steps. This is because higher steps require more energy to cross. In conclusion, this work not only reveals the growth mechanism of monolayer MoS₂ but also has significant implications for the development of MoS₂-based electronic, optical, and energy-related devices.

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