Abstract:This work reports a high‐reproducible, high‐efficient epitaxial growth method of wafer‐scale (over two inches) monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by designing a "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio. 2D semiconducting transition‐metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next‐generation transistors. To meet the industry needs, large‐scale production of single‐crystal monolayer TMDs in highly reproducible and energy‐efficient manner is critically significant. Herein, it is reported that the high‐reproducible, high‐efficient epitaxial growth of wafer‐scale monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by virtue of a deliberately designed "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short‐distance transport, and moderate deposition of metal precursor on a wafer‐scale substrate, affording high‐efficient and high‐reproducible growth of wafer‐scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer‐scale single‐crystal 2D materials, thus propelling their practical applications in highly integrated high‐performance nanoelectronics and optoelectronics.

Importance of the Substrate's Surface Evolution During the MOVPE Growth of 2D-Transition Metal Dichalcogenides.

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Critical Role of Surface Termination of Sapphire Substrates in Crystallographic Epitaxial Growth of MoS2 Using Inorganic Molecular Precursors.

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Chemical Vapor Deposition of a Single-Crystalline MoS 2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface

(Invited) Epitaxial Growth of Transition Metal Dichalcogenide Monolayers for Large Area Device Applications

(Invited, Digital Presentation) Wafer-Scale Epitaxial Growth of Transition Metal Dichalcogenide Monolayers on Sapphire for Large Area Device Applications

Highly Reproducible Epitaxial Growth of Wafer‐Scale Single‐Crystal Monolayer MoS2 on Sapphire

Impact of Sapphire Step Height on the Growth of Monolayer Molybdenum Disulfide

Atomically Thin Decoration Layers for Robust Orientation Control of 2D Transition Metal Dichalcogenides

Understanding Substrate Effects on 2D MoS2 Growth: A Kinetic Monte Carlo Approach

Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides

Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Oriented lateral growth of monolayer MoS2 mediated by highly-oriented MoO2 nanorods on sapphire

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

Effect of Process Temperature on Molybdenum Disulphide Layers Grown by Chemical Vapor Deposition Technique