Abstract:Controllable synthesis of MoS2 with desired number of layers via chemical vapor deposition (CVD) remains challenging.Hence, it is highly desirable to develop a theoretical model that can be used to predict the single-and multilayer growth of MoS2 quantitatively, and provide guidelines for experimental fabrication.Herein we have established a kinetic Monte Carlo (kMC) model to predict the CVD growth of mono-and bilayer MoS2.First, we proposed that the growth rates of layer 1 and layer 2 were governed by the distribution of the adatom concentration, and the growth kinetics of compact triangular MoS2 followed the kink nucleation-propagation mechanism.The adatom concentration was formulated in terms of adatom flux, effective lifetime of adatoms, growth temperature, binding energies, edge energies, and nucleation criterion.The kink nucleation and propagation were determined by energy barriers of the adatom attachments to the zigzag and armchair edges.We then employed an analytic thermodynamic criterion to extract these parameters.Using the calibrated model, we found that the growth rate of layer 2 strongly depended on the size of layer 1 and decreased monotonically with increasing size of layer 1, and might even become prohibited at the maximum size of layer 1.Furthermore, we analyzed the size and morphology evolutions of bilayer MoS2 at different growth temperatures and adatom fluxes.Throughout the growth processes of bilayer MoS2, the morphologies of layers 1 and 2 maintained triangular shapes with compact edges, consistent with the kink nucleation-propagation growth mechanism.Our simulations revealed that the growth of bilayer MoS2 was promoted by increasing the growth temperature or decreasing the adatom flux, which corroborated the experimental observations.The increase in growth temperature led to reduced adatom concentration at the edge of layer 2 in accordance with the adatom concentration far from the edge of layer 2, resulting in a consistent difference in the adatom concentration to promote the growth of bilayer MoS2.Similarly, the decrease in adatom flux lowered the difference between the adatom concentrations far from the edge and at the edge of layer 1, decelerating the growth of layer 1.The decelerated growth of layer 1 reduced the difference between the adatom concentrations far from the edge and at the edge of layer 2 to zero, permitting the growth of bilayer MoS2.To guide the experimental synthesis, we constructed a phase diagram to delineate the permitted or prohibited growth of bilayer MoS2 at different growth temperatures and adatom fluxes.Hence, this work not only unveils the conditions for the growth of mono-and bi-layer MoS2, but also provides guidelines for controllable synthesis of MoS2 with the desired number of layers.

Understanding Substrate Effects on 2D MoS2 Growth: A Kinetic Monte Carlo Approach

Understanding Substrate Effects on Two-Dimensional MoS2 Growth: a Kinetic Monte Carlo Approach

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Edge Reconstruction-Dependent Growth Kinetics of MoS2

kinetic Monte Carlo perspectives on substrate-induced anisotropic growth of monolayer tungsten disulfide.

Effect of Substrate Symmetry on the Orientations of MoS2 Monolayers.

Mechanism of substrate-induced anisotropic growth of monolayer WS2 by kinetic Monte Carlo simulations

The effect of sulfuration reaction rates with sulphur concentration gradient dependence on the growth pattern and morphological evolution of MoS2 in laminar flow

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Substrate effects on the CVD growth of MoS2 and WS2

Effect of substrate symmetry on the orientations of MoS 2 monolayers

Substrate-aware computational design of two-dimensional materials

Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides

A Kinetic Monte Carlo Study for Mono- and Bi-layer Growth of MoS2 During Chemical Vapor Deposition

Mo Concentration Controls the Morphological Transitions from Dendritic to Semicompact, and to Compact Growth of Monolayer Crystalline MoS2 on Various Substrates.

Substrate Effect on the Growth of Monolayer Dendritic Mos2 on Laalo3 (100) and Its Electrocatalytic Applications

Influence of substrate placement on synthesis of two-dimensional MoS2

Morphological Evolution of Monolayer MoS2 Single-Crystalline Flakes

Revealing the Grain Boundary Formation Mechanism and Kinetics During Polycrystalline MoS2 Growth.

Capture the growth kinetics of CVD growth of two-dimensional MoS2