Abstract:As an emerging two-dimensional (2D) semiconductor material, monolayer molybdenum disulfide (MoS2) films have a natural atomic-level thickness, excellent optoelectronic and mechanical properties, and have the potential to be used in very large-scale integration technology in the future. This article summarizes the progress made by our research group in the research of monolayer MoS2 films in the past few years. The controlled growth of large-size MoS2 single crystals has been achieved by oxygen-assisted chemical vapor deposition method. Through a unique facile multisource CVD growth method, the epitaxial growth of highly oriented and large domain size ML MoS2 films at a 4inch wafer scale is realized. Almost only 0 and 60° oriented domains are present in films, and the domain size, on average, is greater than 180 μm at the largest. The samples suggest their best optical and electrical quality ever obtained, as evidenced from their wafer-scale homogeneity, nearly perfect lattice structure, average room-temperature device mobility of ~70 cm2V?1s?1 and high on/off ratio of ~109 on SiO2 substrates. By adjusting the oxygen doping concentration of the MoS2 film with an effective CVD technique, a significant modulation on electrical and optical properties can be achieved, greatly improves carrier mobilities and controllable n-type electronic doping effects resulted from optimized oxygen doping levels of MoS2-xOx are revealed. In terms of MoS2 thin film devices and applications, the 4inch wafer-scale high-quality MoS2 monolayers are used to fabricate transparent MoS2-based transistors and logic circuits on flexible substrates. This large-area flexible FET device shows excellent electrical performance with a high device density (1,518 transistors per cm2) and yield (97%), and exhibit high on/off ratios (1010), current densities (~35μAμm?1), mobilities (~55cm2V-1s-1) and flexibility. Based on the vertically integrated multilayer devices via the layer-by-layer stacking process, an individual layer of all-2D multifunctional FETS are successfully achieved with nearly multiplied on-current density, equivalent device mobility, and persevered on/off ratio and SS of the individual layers, the combined performance of the device is fully utilized, and the integration of "sensing-storing-computing" is realized. A two-terminal floating-gate memory (2TFGM) based artificial synapse built from all-2D van der Waals materials is prepared, the 2TFGM synaptic device exhibits excellent linear and symmetric weight update characteristics with high reliability and tunability, A large number of states up to ≈3000, high switching speed of 40 ns and low energy consumption of 18 fJ for a single pulse have been demonstrated experimentally. The introduction of structural domain boundaries in the basal plane of monolayer MoS2 can greatly enhance its hydrogen evolution reaction performance by serving as active sites. The progress we have made in the preparation of monolayer MoS2 films and the research on device characteristics is of guiding significance for the basic and application research of MoS2, and is universal and instructive for other 2D transition metal dichalcogenides.

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Dendritic, Transferable, Strictly Monolayer MoS2 Flakes Synthesized on SrTiO3 Single Crystals for Efficient Electrocatalytic Applications

Controllable Growth and Transfer of Monolayer MoS2 on Au Foils and Its Potential Application in Hydrogen Evolution Reaction.

Substrate Facet Effect on the Growth of Monolayer MoS2 on Au Foils.

Layer-By-Layer Polyelectrolyte Assisted Growth of 2d Ultrathin Mos2 Nanosheets on Various 1d Carbons for Superior Li-Storage

Controllable Growth of MoS2 on Au Foils and Its Application in Hydrogen Evolution

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Controllable Growth of Monolayer MoS2by Chemical Vapor Deposition Via Close MoO2precursor for Electrical and Optical Applications

Monolayer MoS2 Dendrites on a Symmetry‐Disparate SrTiO3 (001) Substrate: Formation Mechanism and Interface Interaction

Directly grown monolayer MoS2 on Au foils as efficient hydrogen evolution catalysts

Sodium chloride-assisted CVD enables controlled synthesis of large single-layered MoS2

Effect of Substrate Symmetry on the Orientations of MoS2 Monolayers.

Cotrollable growth of monolayer MoS2 films and the application in devices

Large Area Vapor Phase Growth and Characterization of MoS2 Atomic Layers on SiO2 Substrate

Monolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging

Understanding Substrate Effects on 2D MoS2 Growth: A Kinetic Monte Carlo Approach

Abundant Catalytic Edge Sites in Few-Layer Horizontally Aligned MoS2 Nanosheets Grown by Space-Confined Chemical Vapor Deposition

Experimental and theoretical investigation on pre-deposited precursor as growth sites for monolayer MoS 2 growth by supercritical fluid deposition

Effect of substrate symmetry on the orientations of MoS 2 monolayers

Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2