Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Monolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging

Monolayer Films: Monolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging (Adv. Funct. Mater. 6/2015)

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Controllable Growth and Transfer of Monolayer MoS2 on Au Foils and Its Potential Application in Hydrogen Evolution Reaction.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Controllable Growth of MoS2 on Au Foils and Its Application in Hydrogen Evolution

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)

Substrate Facet Effect on the Growth of Monolayer MoS2 on Au Foils.

A high-quality round-shaped monolayer MoS2 domain and its transformation.

Fast and large-area growth of uniform MoS2 monolayers on molybdenum foils.

Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices.

Directly grown monolayer MoS2 on Au foils as efficient hydrogen evolution catalysts

MoS2-OH Bilayer-Mediated Growth of Inch-Sized Monolayer MoS2 on Arbitrary Substrates

Monolayer MoS2 epitaxy

Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

Dendritic, Transferable, Strictly Monolayer MoS2 Flakes Synthesized on SrTiO3 Single Crystals for Efficient Electrocatalytic Applications

Single-Crystal MoS2 Monolayer Wafer Grown on Au (111) Film Substrates

A Controllable Synthesis of Uniform MoS2 Monolayers on Annealed Molybdenum Foils

Wafer-Scale Highly Oriented Monolayer MoS 2 with Large Domain Sizes

Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes