Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes

Qinqin Wang,Na Li,Jian Tang,Jianqi Zhu,Qinghua Zhang,Qi Jia,Ying Lu,Zheng Wei,Hua Yu,Yanchong Zhao,Yutuo Guo,Lin Gu,Gang Sun,Wei Yang,Rong Yang,Dongxia Shi,Guangyu Zhang
DOI: https://doi.org/10.1021/acs.nanolett.0c02531
IF: 10.8
2020-01-01
Nano Letters
Abstract:Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS2 wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS2 wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS2.
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