A tracheostomy for the Marlboro man

R. Bittoun

DOI: https://doi.org/10.5694/J.1326-5377.1982.TB124230.X

1982-07-01

Abstract:

What problem does this paper attempt to address?

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Degong Ding,Shuang Wang,Yipu Xia,Pai Li,Daliang He,Junqiu Zhang,Sunwen Zhao,Guanghui Yu,Yonghui Zheng,Yan Cheng,Maohai Xie,Feng Ding,Chuanhong Jin

DOI: https://doi.org/10.1021/acsnano.2c08188

IF: 17.1

2022-01-01

ACS Nano

Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.
Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Yipu Xia,Degong Ding,Ke Xiao,Junqiu Zhang,Shaogang Xu,Daliang He,Xingyu Yue,Qing Rao,Xiong Wang,Sujuan Ding,Guoyun Gao,Hongxia Xue,Yueyang Wang,Mengfei Yuan,Wingkin Ho,Dong-Keun Ki,Hu Xu,Xiaodong Cui,Chuanhong Jin,Maohai Xie

DOI: https://doi.org/10.1002/ntls.20220059

2023-01-01

NATURAL SCIENCES

Abstract:AbstractUltrathin two‐dimensional transition‐metal dichalcogenides (TMDs) have been pursued extensively in recent years for interesting physics and application potentials. For the latter, it is essential to synthesize crystalline TMD monolayers at wafer‐scale. Here, we report growth of single‐crystalline MSe2 (M = Mo, W) monolayers at wafer‐scale by molecular‐beam epitaxy at low temperatures (200–400°C) on nominally flat Au(1 1 1) substrates. The epifilms have low intrinsic defect densities of low 1012 cm−2. The grown films have then been exfoliated and transferred onto SiO2/Si by a wet chemical process, on which some optical measurements are performed, revealing high spatial uniformity of the samples. We also establish that MSe2 grows on Au via the van der Waals epitaxy mechanism, where a continuous film extends across the whole surface, overhangs atomic‐layer steps on substrate. We identify that the growth of highly crystalline MSe2 is promoted by an enhanced interaction between Au substrate and MSe2 islands rather than by the guidance of surface steps on substrate. The latter only arrests MSe2 lateral growth if they are multilayer high.Key points MBE growth of wafer‐scale highly crystalline TMD monolayers at low‐temperature is achieved. Island‐substrate interaction is found to play a critical role in vdW epitaxy of single‐crystalline TMDs on on‐axis substates. The TMD monolayers are of high uniformity and low intrinsic defect density.
Epitaxial Growth of High-Quality Monolayer MoS2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

Jingyi Hu,Wenzhi Quan,Pengfei Yang,Fangfang Cui,Fachen Liu,Lijie Zhu,Shuangyuan Pan,Yahuan Huan,Fan Zhou,Jiatian Fu,Guanhua Zhang,Peng Gao,Yanfeng Zhang

DOI: https://doi.org/10.1021/acsnano.2c07978

IF: 17.1

2023-01-01

ACS Nano

Abstract:Epitaxial growth of wafer-scale monolayer semiconducting transition metal dichalcogenide single crystals is essential for advancing their applications in next-generation transistors and highly integrated circuits. Several efforts have been made for the growth of monolayer MoS2 single crystals on high-symmetry Au(111) and sapphire substrates, while more prototype growth systems still need to be discovered for clarifying the internal mechanisms. Herein, we report the epitaxial growth of unidirectionally aligned monolayer MoS2 domains and single-crystal films on low-symmetry Au(101) vicinal facets via a facile chemical vapor deposition method. On-site scanning tunneling microscopy observations reveal the formation of a specific rectangular Moiré pattern along the [101̅] step edge of Au(101) and along its perpendicular direction. The perfect lattice constant matching of MoS2/Au(101) along the substrate high-symmetry directions (i.e., Au[101̅], Au [010]) as well as the step-edge-guiding effect are proposed to facilitate the robust epitaxy. Multiscale characterizations further confirm the domain-boundary-free feature of the monolayer MoS2 films merged by unidirectionally aligned monolayer domains. This work hereby puts forward a symmetry mismatched epitaxial system for the direct synthesis of monolayer MoS2 single crystals, which should deepen our understanding about the epitaxy of 2D layered materials and propel their applications in various fields.
Epitaxial Growth of High-Quality Monolayer MoS 2 Single Crystals on Low-Symmetry Vicinal Au(101) Facets with Different Miller Indices

Jingyi Hu,Wenzhi Quan,Pengfei Yang,Fangfang Cui,Fachen Liu,Lijie Zhu,Shuangyuan Pan,Yahuan Huan,Fan Zhou,Jiatian Fu,Guanhua Zhang,Peng Gao,Yanfeng Zhang

DOI: https://doi.org/10.1021/acsnano.2c07978

IF: 17.1

2022-12-28

ACS Nano

Abstract:Epitaxial growth of wafer-scale monolayer semiconducting transition metal dichalcogenide single crystals is essential for advancing their applications in next-generation transistors and highly integrated circuits. Several efforts have been made for the growth of monolayer MoS(2) single crystals on high-symmetry Au(111) and sapphire substrates, while more prototype growth systems still need to be discovered for clarifying the internal mechanisms. Herein, we report the epitaxial growth of...

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Zhepeng Zhang,Xujing Ji,Jianping Shi,Xiebo Zhou,Shuai Zhang,Yue Hou,Yue Qi,Qiyi Fang,Qingqing Ji,Yu Zhang,Min Hong,Pengfei Yang,Xinfeng Liu,Qing Zhang,Lei Liao,Chuanhong Jin,Zhongfan Liu,Yanfeng Zhang

DOI: https://doi.org/10.1021/acsnano.7b01537

IF: 17.1

2017-01-01

ACS Nano

Abstract:Stacked transition-metal dichalcogenides on hexagonal boron nitride (h-BN) are platforms for high-performance electronic devices. However, such vertical stacks are usually constructed by the layer-by-layer polymer-assisted transfer of mechanically exfoliated layers. This inevitably causes interfacial contamination and device performance degradation. Herein, we develop a two-step, low-pressure chemical vapor deposition synthetic strategy incorporating the direct growth of monolayer h-BN on Au foil with the subsequent growth of MoS2. In such vertical stacks, the interactions between MoS2 and Au are diminished by the intervening h-BN layer, as evidenced by the appearance of photoluminescence in MoS2. The weakened interfacial interactions facilitate the transfer of the MoS2/h-BN stacks from Au to arbitrary substrates by an electrochemical bubbling method. Scanning tunneling microscope/spectroscopy characterization shows that the central h-BN layer partially blocks the metal-induced gap states in MoS2/h-BN/Au ...
Single‐Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates

Jing Li,Shuang Wang,Qi Jiang,Haoji Qian,Shike Hu,He Kang,Chen Chen,Xiaoyi Zhan,Aobo Yu,Sunwen Zhao,Yanhui Zhang,Zhiying Chen,Yanping Sui,Shan Qiao,Guanghui Yu,Songang Peng,Zhi Jin,Xinyu Liu

DOI: https://doi.org/10.1002/smll.202100743

IF: 13.3

2021-06-18

Small

Abstract:Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS2 (SC-MoS2) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS2 domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Deyi Fu,Xiaoxu Zhao,Yu-Yang Zhang,Linjun Li,Hai Xu,A-Rang Jang,Seong In Yoon,Peng Song,Sock Mui Poh,Tianhua Ren,Zijing Ding,Wei Fu,Tae Joo Shin,Hyeon Suk Shin,Sokrates T. Pantelides,Wu Zhou,Kian Ping Loh

DOI: https://doi.org/10.1021/jacs.7b05131

IF: 15

2017-01-01

Journal of the American Chemical Society

Abstract:Atomically thin molybdenum disulfide (MoS2), a direct-band-gap semiconductor, is promising for applications in electronics and optoelectronics, but the scalable synthesis of highly crystalline film remains challenging. Here we report the successful epitaxial growth of a continuous, uniform, highly crystalline monolayer MoS2 film on hexagonal boron nitride (h-BN) by molecular beam epitaxy. Atomic force microscopy and electron microscopy studies reveal that MoS2 grown on h-BN primarily consists of two types of nucleation grains (0 aligned and 60 degrees antialigned domains). By adopting a high growth temperature and ultralow precursor flux, the formation of 60 degrees antialigned grains is largely suppressed. The resulting perfectly aligned grains merge seamlessly into a highly crystalline film. Large-scale monolayer MoS2 film can be grown on a 2 in. h-BN/sapphire wafer, for which surface morphology and Raman mapping confirm good spatial uniformity. Our study represents a significant step in the scalable synthesis of highly crystalline MoS2 films on atomically flat surfaces and paves the way to large-scale applications.
Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Taotao Li,Wei Guo,Liang Ma,Weisheng Li,Zhihao Yu,Zhen Han,Si Gao,Lei Liu,Dongxu Fan,Zixuan Wang,Yang Yang,Weiyi Lin,Zhongzhong Luo,Xiaoqing Chen,Ningxuan Dai,Xuecou Tu,Danfeng Pan,Yagang Yao,Peng Wang,Yuefeng Nie,Jinlan Wang,Yi Shi,Xinran Wang

DOI: https://doi.org/10.1038/s41565-021-00963-8

IF: 38.3

2021-09-02

Nature Nanotechnology

Abstract:Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore's law beyond silicon1,2,3. However, despite extensive efforts4,5,6,7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25, the growth of wafer-scale TMDC single crystals on scalable and industry-compatible substrates has not been well demonstrated. Here we demonstrate the epitaxial growth of 2 inch (~50 mm) monolayer molybdenum disulfide (MoS2) single crystals on a C-plane sapphire. We designed the miscut orientation towards the A axis (C/A) of sapphire, which is perpendicular to the standard substrates. Although the change of miscut orientation does not affect the epitaxial relationship, the resulting step edges break the degeneracy of nucleation energy for the antiparallel MoS2 domains and lead to more than a 99% unidirectional alignment. A set of microscopies, spectroscopies and electrical measurements consistently showed that the MoS2 is single crystalline and has an excellent wafer-scale uniformity. We fabricated field-effect transistors and obtained a mobility of 102.6 cm2 V−1 s−1 and a saturation current of 450 μA μm–1, which are among the highest for monolayer MoS2. A statistical analysis of 160 field-effect transistors over a centimetre scale showed a >94% device yield and a 15% variation in mobility. We further demonstrated the single-crystalline MoSe2 on C/A sapphire. Our method offers a general and scalable route to produce TMDC single crystals towards future electronics.

materials science, multidisciplinary,nanoscience & nanotechnology
Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Lu Li,Qinqin Wang,Fanfan Wu,Qiaoling Xu,Jinpeng Tian,Zhiheng Huang,Qinghe Wang,Xuan Zhao,Qinghua Zhang,Qinkai Fan,Xiuzhen Li,Yalin Peng,Yangkun Zhang,Kunshan Ji,Aomiao Zhi,Huacong Sun,Mingtong Zhu,Jundong Zhu,Nianpeng Lu,Ying Lu,Shuopei Wang,Xuedong Bai,Yang Xu,Wei Yang,Na Li,Dongxia Shi,Lede Xian,Kaihui Liu,Luojun Du,Guangyu Zhang

DOI: https://doi.org/10.1038/s41467-024-46170-6

IF: 16.6

2024-01-01

Nature Communications

Abstract:Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS2 monolayers on industry-compatible substrates of c-plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO3 precursor ratio control. The unidirectional alignment and seamless stitching of MoS2 domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS2 single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm2v-1s-1, and on/off ratio of ~109. Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore's law and industrial applications of 2D electronic circuits.
Space-confined CVD Growth of 2D-Mos2 Crystals with Tunable Dimensionality Via Adjusting Growth Conditions

Fei Chen,Xia Jiang,Jiaqi Shao,Bin Lu,Li Fu,Shichao Zhao,Weitao Su

DOI: https://doi.org/10.1039/d0ce01711f

IF: 3.756

2021-01-01

CrystEngComm

Abstract:2D MoS2 crystals with tunable dimensionality can be realized by the reaction of S and Mo foil under adjusted growth conditions via a space-confined chemical vapor deposition method.
Monolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging

jianping shi,yang yang,donglin ma,wei wei,qingqing ji,xiuju song,teng gao,cong li,xinhe bao,zhongfan liu,qiang fu,yanfeng zhang

DOI: https://doi.org/10.1002/adfm.201403659

IF: 19

2015-01-01

Advanced Functional Materials

Abstract:Controllable synthesis of large domain, high-quality monolayer MoS2 is the basic premise both for exploring some fundamental physical issues, and for engineering its applications in nanoelectronics, optoelectronics, etc. Herein, by introducing H-2 as carrier gas, the successful synthesis of large domain monolayer MoS2 triangular flakes on Au foils, with the edge length approaching to 80 mm is reported. The growth process is proposed to be mediated by two competitive effects with H-2 acting as both a reduction promoter for efficient sulfurization of MoO3 and an etching reagent of resulting MoS2 flakes. By using low-energy electron microscopy/diffraction, the crystal orientations and domain boundaries of MoS2 flakes directly on Au foils for the first time are further identified. These on-site and transfer-free characterizations should shed light on the initial growth and the aggregation of MoS2 on arbitrary substrates, further guiding the growth toward large domain flakes or monolayer films.
Highly Reproducible Epitaxial Growth of Wafer‐Scale Single‐Crystal Monolayer MoS2 on Sapphire

Pengfei Yang,Fachen Liu,Xuan Li,Jingyi Hu,Fan Zhou,Lijie Zhu,Qing Chen,Peng Gao,Yanfeng Zhang

DOI: https://doi.org/10.1002/smtd.202300165

IF: 12.4

2023-04-12

Small Methods

Abstract:This work reports a high‐reproducible, high‐efficient epitaxial growth method of wafer‐scale (over two inches) monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by designing a "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio. 2D semiconducting transition‐metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next‐generation transistors. To meet the industry needs, large‐scale production of single‐crystal monolayer TMDs in highly reproducible and energy‐efficient manner is critically significant. Herein, it is reported that the high‐reproducible, high‐efficient epitaxial growth of wafer‐scale monolayer MoS2 single crystals on the industry‐compatible sapphire substrates, by virtue of a deliberately designed "face‐to‐face" metal‐foil‐based precursor supply route, carbon‐cloth‐filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short‐distance transport, and moderate deposition of metal precursor on a wafer‐scale substrate, affording high‐efficient and high‐reproducible growth of wafer‐scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS2 single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer‐scale single‐crystal 2D materials, thus propelling their practical applications in highly integrated high‐performance nanoelectronics and optoelectronics.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Revisiting the Epitaxial Growth Mechanism of 2D TMDC Single Crystals

Chenyang Li,Fangyuan Zheng,Jiacheng Min,Ni Yang,Yu‐Ming Chang,Haomin Liu,Yuxiang Zhang,Pengfei Yang,Qinze Yu,Yu Li,Zhengtang Luo,Areej Aljarb,Kaimin Shih,Jing‐Kai Huang,Lain‐Jong Li,Yi Wan

DOI: https://doi.org/10.1002/adma.202404923

IF: 29.4

2024-08-19

Advanced Materials

Abstract:This study uncovers the pivotal role of sulfur evaporation rates in directing the growth modes of MoS2 on sapphire. Low sulfur levels preserve O/Al‐terminated step edges, fostering atomic‐edge epitaxy, while high sulfur levels favor S‐terminated edges, promoting van der Waals epitaxy. The findings highlight that van der Waals epitaxy achieves superior MoS2 alignment (≈99%) on a 2 in. wafer, offering new insights into precise 2D material fabrication. Epitaxial growth of 2D transition metal dichalcogenides (TMDCs) on sapphire substrates has been recognized as a pivotal method for producing wafer‐scale single‐crystal films. Both step‐edges and symmetry of substrate surfaces have been proposed as controlling factors. However, the underlying fundamental still remains elusive. In this work, through the molybdenum disulfide (MoS2) growth on C/M sapphire, it is demonstrated that controlling the sulfur evaporation rate is crucial for dictating the switch between atomic‐edge guided epitaxy and van der Waals epitaxy. Low‐concentration sulfur condition preserves O/Al‐terminated step edges, fostering atomic‐edge epitaxy, while high‐concentration sulfur leads to S‐terminated edges, preferring van der Waals epitaxy. These experiments reveal that on a 2 in. wafer, the van der Waals epitaxy mechanism achieves better control in MoS2 alignment (≈99%) compared to the step edge mechanism (<85%). These findings shed light on the nuanced role of atomic‐level thermodynamics in controlling nucleation modes of TMDCs, thereby providing a pathway for the precise fabrication of single‐crystal 2D materials on a wafer scale.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Epitaxial growth of inch-scale single-crystal transition metal dichalcogenides through the patching of unidirectionally orientated ribbons

Pengfei Yang,Dashuai Wang,Xiaoxu Zhao,Wenzhi Quan,Qi Jiang,Xuan Li,Bin Tang,Jingyi Hu,Lijie Zhu,Shuangyuan Pan,Yuping Shi,Yahuan Huan,Fangfang Cui,Shan Qiao,Qing Chen,Zheng Liu,Xiaolong Zou,Yanfeng Zhang

DOI: https://doi.org/10.1038/s41467-022-30900-9

IF: 16.6

2022-06-10

Nature Communications

Abstract:Abstract Two-dimensional (2D) semiconductors, especially transition metal dichalcogenides (TMDs), have been envisioned as promising candidates in extending Moore’s law. To achieve this, the controllable growth of wafer-scale TMDs single crystals or periodic single-crystal patterns are fundamental issues. Herein, we present a universal route for synthesizing arrays of unidirectionally orientated monolayer TMDs ribbons (e.g., MoS 2 , WS 2 , MoSe 2 , WSe 2 , MoS x Se 2-x ), by using the step edges of high-miller-index Au facets as templates. Density functional theory calculations regarding the growth kinetics of specific edges have been performed to reveal the morphological transition from triangular domains to patterned ribbons. More intriguingly, we find that, the uniformly aligned TMDs ribbons can merge into single-crystal films through a one-dimensional edge epitaxial growth mode. This work hereby puts forward an alternative pathway for the direct synthesis of inch-scale uniform monolayer TMDs single-crystals or patterned ribbons, which should promote their applications as channel materials in high-performance electronics or other fields.

multidisciplinary sciences
T AILD-like non Hodgkin lymphoma complicated by malignant mesenchymal ocular neoplasia: a case report.

G. Landonio,A. Nosari,M. Barberis,M. Costantini,D. Cipriani,E. Ghislandi

Haematologica

Abstract:We report a case of T AILD-like NHL in a 50-year-old man who partially responded to combined therapies. The course of the disease was complicated by a malignant mesenchymal ocular neoplasia. The patient died because of severe infections and lymphoma dissemination. The association between T AILD-like NHL and carcinomas has been described: no case of concomitant malignant mesenchymal neoplasia is reported in literature.
Oriented lateral growth of monolayer MoS2 mediated by highly-oriented MoO2 nanorods on sapphire

Jie Wang,Feifei Lan,Zeyan Wang,Yingmin Wang,Baibiao Huang,Yujian Wang

DOI: https://doi.org/10.1039/d4ce00836g

IF: 3.756

2024-09-26

CrystEngComm

Abstract:Two-dimensional (2D) transition metal chalcogenides (TMDs) have demonstrated immense potential and broad prospects in advancing the fields of next-generation optoelectronics, spintronics, valley electronics, and traditional electronics. In recent years, significant progress has been made in the growth research of TMDs through continuous optimization and innovation of various synthetic strategies. However, precisely controlling the growth conditions of materials, synthesizing high-quality 2D materials with a single domain structure, and achieving the desired shape and performance standards remains a complex scientific challenge. Here, we report on the study of MoS2 nucleation and growth habits by precisely controlling the ratio of molybdenum and sulfur sources during the growth process. Using pre-deposited highly oriented MoO2 nanorods as templates, two preferentially oriented (0° or 60°) MoS2 crystal domains were obtained on c-plane sapphire. Characterization using Raman spectroscopy, PL, XPS, and HRTEM reveals that monolayer MoS2 continuous film, grown using this templating method, possesses superior quality. Our work demonstrates a method for directional growth of high-quality 2D MoS2 thin films using highly oriented 1D MoO2 nanorods as templates and precursors, providing new insights into orientation control for epitaxial growth of 2D TMDs materials.

chemistry, multidisciplinary,crystallography
Potassium absorption from sustained release tablets.

C. Graffner,J. Sjögren

1971-03-01

Abstract:
Wafer-Scale Highly Oriented Monolayer MoS 2 with Large Domain Sizes

Qinqin Wang,Na Li,Jian Tang,Jianqi Zhu,Qinghua Zhang,Qi Jia,Ying Lu,Zheng Wei,Hua Yu,Yanchong Zhao,Yutuo Guo,Lin Gu,Gang Sun,Wei Yang,Rong Yang,Dongxia Shi,Guangyu Zhang

DOI: https://doi.org/10.1021/acs.nanolett.0c02531

IF: 10.8

2020-08-24

Nano Letters

Abstract:Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS2 wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS2 wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS2.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.0c02531?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.0c02531</a>.Photo of the 4 in. multisource CVD system, more growth results under different oxygen flux and temperature, AFM and STEM images of additional layer growth on grain boundaries, AFM images of different locations of a wafer, XPS and Raman characterizations to confirm the oxygen concentration and strain in MoS2 films, more electrical measurements for MoS2 films, detailed structure of logic circuits and the MoS2 growth results on SiO2/Si substrates (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.0c02531/suppl_file/nl0c02531_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
8‐Inch Wafer‐scale Epitaxial Monolayer MoS2

Hua Yu,Liangfeng Huang,Lanying Zhou,Yaling Peng,Xiuzhen Li,Peng Yin,Jiaojiao Zhao,Mingtong Zhu,Shuopei Wang,Jieying Liu,Hongyue Du,Jian Tang,Songge Zhang,Yuchao Zhou,Nianpeng Lu,Kaihui Liu,Na Li,Guangyu Zhang

DOI: https://doi.org/10.1002/adma.202402855

IF: 29.4

2024-01-01

Advanced Materials

Abstract:AbstractLarge‐scale, high‐quality, and uniform monolayer MoS2 films are crucial for their applications in next‐generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high‐quality MoS2 films and has been demonstrated at a wafer scale up to 4‐inch. In this study, we report the epitaxial growth of 8‐inch wafer‐scale highly oriented monolayer MoS2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as‐grown 8‐inch wafer‐scale monolayer MoS2 film were fabricated and exhibited high performances, with an average mobility and an on/off ratio of 53.5 cm2V−1s−1 and 107, respectively. In addition, batch fabrication of logic devices and 11‐stage ring oscillators were also demonstrated, showcasing excellent electrical functions. Our work may pave way of MoS2 in practical industry‐scale applications.This article is protected by copyright. All rights reserved
A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Dawei Li,Zhiyong Xiao,Sai Mu,Fei Wang,Ying Liu,Jingfeng Song,Xi Huang,Lijia Jiang,Jun Xiao,Lei Liu,Stephen Ducharme,Bai Cui,Xia Hong,Lan Jiang,Jean-Francois Silvain,Yongfeng Lu

DOI: https://doi.org/10.1021/acs.nanolett.7b05473

2018-03-14

Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

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