Abstract:Atomically-thin monolayer WS2 is a promising channel material for next-generation Moore's nanoelectronics owing to its high theoretical room temperature electron mobility and immunity to short channel effect. The high photoluminescence (PL) quantum yield of the monolayer WS2 also makes it highly promising for future high-performance optoelectronics. However, the difficulty in strictly growing monolayer WS2, due to its non-self-limiting growth mechanism, may hinder its industrial development because of the uncontrollable growth kinetics in attaining the high uniformity in thickness and property on the wafer-scale. In this study, we report a scalable process to achieve a 4 inch wafer-scale fully-covered strictly monolayer WS2 by applying the in situ self-limited thinning of multilayer WS2 formed by sulfurization of WOx films. Through a pulsed supply of sulfur precursor vapor under a continuous H2 flow, the self-limited thinning process can effectively trim down the overgrown multilayer WS2 to the monolayer limit without damaging the remaining bottom WS2 monolayer. Density functional theory (DFT) calculations reveal that the self-limited thinning arises from the thermodynamic instability of the WS2 top layers as opposed to a stable bottom monolayer WS2 on sapphire above a vacuum sublimation temperature of WS2. The self-limited thinning approach overcomes the intrinsic limitation of conventional vapor-based growth methods in preventing the 2nd layer WS2 domain nucleation/growth. It also offers additional advantages, such as scalability, simplicity, and possibility for batch processing, thus opening up a new avenue to develop a manufacturing-viable growth technology for the preparation of a strictly-monolayer WS2 on the wafer-scale.

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Controllable Synthesis of High Quality Monolayer WS2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

Enhanced epitaxial growth of two-dimensional monolayer WS2 film with large single domains

Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

Wafer-scale epitaxial growth of single orientation WS2 monolayers on sapphire

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Synthesis and Transfer of Large-Area Monolayer Ws2 Crystals: Moving Toward the Recyclable Use of Sapphire Substrates

CVD Controlled Growth of Large-Scale WS2 Monolayers

Two-Dimensional High-Quality Monolayered Triangular WS2 Flakes for Field-Effect Transistors

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition

Sublimation-based wafer-scale monolayer WS2 formation via self-limited thinning of few-layer WS2

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Rational Design for High-Yield Monolayer WS2films in Confined Space under Fast Thermal Processing.

Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

ZnO-Controlled Growth of Monolayer WS2 Through Chemical Vapor Deposition