Abstract:Abstract Batch production of single-crystal two-dimensional (2D) transition metal dichalcogenides is one prerequisite for the fabrication of next-generation integrated circuits (IC). Contemporary strategies for the wafer-scale high-quality crystallinity of 2D materials center on merging the unidirectionally aligned different size domains. However, the imperfectly merged area with translational lattice brings about high defect density and low device uniformity, which restricts the application of 2D materials. Here, we take the lead in establishing the 2D Czochralski method that can rapidly grow wafer-scale, single-crystal MoS2 with no grain boundaries. The method relies on a liquid-liquid interface spreading mechanism, which eventually realizes the Czochralski method in 2D materials growth. Specifically, a 2D intermediate liquid (Na2Mo2O7) film is formed through a eutectic reaction on an atomically smooth surface before sulfurization, leading to an ultralow nucleation density, an ultrafast crystallization rate (75 μm s-1), and thus producing large single-crystal MoS2 with the record domain size larger than 1.5 cm. Meanwhile, the 2D Czochralski method produces an ultra-clean, fast, and high-quality transfer process facilitated by the significantly reduced adhesion between the MoS2 crystal and the atomically smooth substrate. The obtained MoS2 large single-crystal shows superb uniformity and high quality with an ultralow defect density of 2.9×1012 cm-2, a high mobility of 105.4 cm2 V-1 s-1, and a saturation current of 443.8 μA μm-1 in the short-channel devices. A statistical analysis of 192 field-effect transistors within a centimeter-scale domain showed a 96.4% device yield and a 15.9% variation in mobility with a minimal variation of 15.9%, positioning itself as an advanced standard monolayer MoS2 device. This 2D Czochralski method provides fruitful implications for fabricating high-quality and scalable 2D semiconductor materials and devices.

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS 2 monolayer from chemical vapor deposition

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Enhanced epitaxial growth of two-dimensional monolayer WS2 film with large single domains

Intrinsic Excitonic Emission and Valley Zeeman Splitting in Epitaxial MS2 (M = Mo and W) Monolayers on Hexagonal Boron Nitride

2d Ws2: From Vapor Phase Synthesis To Device Applications

Two-Dimensional Monolayer Mx2 (m=mo, W; X=S, Se) Synthesis, Characterization and Device Applications

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Synthesis and Ellipsometric Characterizations of Large-Scale MoS2 Sub-Monolayer

Optical Properties of 2D Semiconductor WS<sub>2</sub>

Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Two-dimensional Czochralski growth of single-crystal MoS2

Controlled Vapor Growth and Nonlinear Optical Applications of Large-Area 3R Phase WS2 and WSe2 Atomic Layers

Utilizing a NaOH Promoter to Achieve Large Single-Domain Monolayer WS2 Films Via Modified Chemical Vapor Deposition.