Abstract:2D layered materials, such as graphene and transition metal dichalcogenides (TMDs), have aroused great interest during the last decade because of their extraordinary properties for both fundamental physics and promising potential applications.[1–16] Though graphene has very high mobility, there is a key bottleneck for graphene-based transistors that its on-off ratio is very small due to the inherent gapless band structure of graphene.[1,17] Superior to graphene, monolayer (1L) TMDs with native direct bandgaps in the visible and near-infrared range have begun to attract increasing attention as 2D semiconductors. TMDs with common formula MX2 (M = Mo, W; X = S, Se), as representative prototype systems of 2D semiconductors, have been widely and intensively studied. Among them, 1L tungsten disulfide (WS2) is attracting a growing interest due to 2D semiconductor tungsten disulfide (WS2) attracts significant interest in both fundamental physics and many promising applications such as light emitters, photodetectors/sensors, valleytronics, and flexible nanoelectronics, due to its fascinating optical, electronic, and mechanical properties. Herein, basic exciton properties of monolayer WS2 are reviewed including neutral excitons, charged excitons, bounded excitons, biexcitons, and the effects of electrostatic gating, chemical doping, strain, magnetic field, circular polarized light, and substrate on these excitonic structures. Besides basic excitonic emission, single-photon emission, exciton–polaritons, and stimulated emission in monolayer WS2 are also discussed. The understanding of these optical phenomena is critical for the development of potential optical applications in electronic and optoelectronic devices. Finally, a summary and future prospective of the challengers and developments regarding 2D semiconductor WS2 is presented. 2D Semiconductors

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS 2 monolayer from chemical vapor deposition

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition

Bandgaps of Monolayer MoS 2 and WS 2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

Enhanced epitaxial growth of two-dimensional monolayer WS2 film with large single domains

Synthesis of Wafer-Scale Monolayer WS2 Crystals toward the Application in Integrated Electronic Devices

Controllable Synthesis of High Quality Monolayer WS2 with Large Size on Sapphire Substrate by Chemical Vapor Deposition

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition

Optical Properties of 2D Semiconductor WS2

Two-Dimensional Monolayer Mx2 (m=mo, W; X=S, Se) Synthesis, Characterization and Device Applications

2d Ws2: From Vapor Phase Synthesis To Device Applications

Effect of Layer and Stacking Sequence in Simultaneously Grown 2H and 3R WS2 Atomic Layers

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Controlled Growth of High-Quality Monolayer Ws2 Layers on Sapphire and Imaging Its Grain Boundary

Facile and Controllable Synthesis of Large-Area Monolayer WS2 Flakes Based on WO3 Precursor Drop-Casted Substrates by Chemical Vapor Deposition

Optical Properties of 2D Semiconductor WS<sub>2</sub>

Large-area synthesis of monolayer WSe₂ on a SiO₂/Si substrate and its device applications.

Utilizing a NaOH Promoter to Achieve Large Single-Domain Monolayer WS2 Films Via Modified Chemical Vapor Deposition.

Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

One-Dimensional Crystallographic Etching of Few-Layer WS$_2$