Abstract:Transition metal dichalcogenide (TMDC) monolayer has recently emerged as an important two-dimensional semiconductor with promising potentials for electronic and optoelectronic devices. Unlike semi-metallic graphene, layered TMDC has a sizable band gap. More interestingly, when thinned down to a monolayer, TMDC transforms from an indirect bandgap to a direct bandgap semiconductor, exhibiting a number of intriguing optical phenomena such as valley selective circular dichroism, doping dependent charged excitons, and strong photocurrent responses. However, the fundamental mechanism underlying such a strong light-matter interaction is still under intensive investigation. The observed optical resonance was initially considered to be band-to-band transitions. In contrast, first-principle calculations predicted a much larger quasiparticle band gap size and an optical response that is dominated by excitonic effects. Here, we report experimental evidence of the exciton dominance mechanism by discovering a series of excitonic dark states in single-layer WS2 using two-photon excitation spectroscopy. In combination with GW-BSE theory, we find the excitons are Wannier excitons in nature but possess extraordinarily large binding energy (~0.7 eV), leading to a quasiparticle band gap of 2.7 eV. These strongly bound exciton states are observed stable even at room temperature. We reveal an exciton series in significant deviation from hydrogen models, with a novel inverse energy dependence on the orbital angular momentum. These excitonic energy levels are experimentally found robust against environmental perturbations. The discovery of excitonic dark states and exceptionally large binding energy not only sheds light on the importance of many-electron effects in this two-dimensional gapped system, but also holds exciting potentials for the device application of TMDC monolayers and their heterostructures.

Optical Properties of 2D Semiconductor WS2

Optical Properties of 2D Semiconductor WS<sub>2</sub>

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition

Revealing Electronic Nature of Broad Bound Exciton Bands in Two-Dimensional Semiconducting WS2 and MoS2

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Exciton manifolds in highly ambipolar doped WS2

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Recent Excellent Optoelectronic Applications Based on Two-Dimensional WS2 Nanomaterials: A Review

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Ultrathin WS2‐on‐Glass Photonic Crystal for Self‐Resonant Exciton‐Polaritonics

Nonblinking, intense two-dimensional light emitter: monolayer WS2 triangles.

Exploration Of Exciton Behavior In Atomically Thin Ws2 Layers By Ionic Gating

Electrical Control of Valley Polarized Charged Exciton Species in Monolayer WS 2

Probing Excitonic Dark States in Single-layer Tungsten Disulfide

Two dimensional semiconductors: optical and electronic properties

Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

Monolayer tungsten disulfide in photonic environment: Angle-resolved weak and strong light-matter coupling

Dynamics of exciton energy renormalization in monolayer transition metal disulfides

Shedding light on the monolayer-WSe2 exciton's nature by optical effective-mass measurements