Abstract:2D layered materials, such as graphene and transition metal dichalcogenides (TMDs), have aroused great interest during the last decade because of their extraordinary properties for both fundamental physics and promising potential applications.[1–16] Though graphene has very high mobility, there is a key bottleneck for graphene-based transistors that its on-off ratio is very small due to the inherent gapless band structure of graphene.[1,17] Superior to graphene, monolayer (1L) TMDs with native direct bandgaps in the visible and near-infrared range have begun to attract increasing attention as 2D semiconductors. TMDs with common formula MX2 (M = Mo, W; X = S, Se), as representative prototype systems of 2D semiconductors, have been widely and intensively studied. Among them, 1L tungsten disulfide (WS2) is attracting a growing interest due to 2D semiconductor tungsten disulfide (WS2) attracts significant interest in both fundamental physics and many promising applications such as light emitters, photodetectors/sensors, valleytronics, and flexible nanoelectronics, due to its fascinating optical, electronic, and mechanical properties. Herein, basic exciton properties of monolayer WS2 are reviewed including neutral excitons, charged excitons, bounded excitons, biexcitons, and the effects of electrostatic gating, chemical doping, strain, magnetic field, circular polarized light, and substrate on these excitonic structures. Besides basic excitonic emission, single-photon emission, exciton–polaritons, and stimulated emission in monolayer WS2 are also discussed. The understanding of these optical phenomena is critical for the development of potential optical applications in electronic and optoelectronic devices. Finally, a summary and future prospective of the challengers and developments regarding 2D semiconductor WS2 is presented. 2D Semiconductors

Revealing Electronic Nature of Broad Bound Exciton Bands in Two-Dimensional Semiconducting WS2 and MoS2

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Exciton manifolds in highly ambipolar doped WS2

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Tunable electronic properties of two-dimensional transition metal dichalcogenide alloys: A first-principles prediction

Optical Properties of 2D Semiconductor WS<sub>2</sub>

Optical Properties of 2D Semiconductor WS2

Photoluminescence of Chemically and Electrically Doped Two-Dimensional Monolayer Semiconductors

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Intrinsic Excitonic Emission and Valley Zeeman Splitting in Epitaxial MS2 (M = Mo and W) Monolayers on Hexagonal Boron Nitride

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2

Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping

Probing Exciton Complexes and Charge Distribution in Inkslab-Like WSe2 Homojunction.

Influence of Lattice Vibrations on Luminescence and Transfer of Excitons in WS2monolayer Semiconductors

Exploration Of Exciton Behavior In Atomically Thin Ws2 Layers By Ionic Gating

Title : Observation of Long-Lived Interlayer Excitons in Monolayer MoSe 2-WSe 2 Heterostructures

Intrinsic donor-bound excitons in ultraclean monolayer semiconductors

Observation of Strong Valley Magnetic Response in Monolayer Transition Metal Dichalcogenide Alloys of Mo0.5W0.5Se2 and Mo0.5W0.5Se2/WS2 Heterostructures