Title : Observation of Long-Lived Interlayer Excitons in Monolayer MoSe 2-WSe 2 Heterostructures

Pasqual Rivera,John R. Schaibley,Aaron M. Jones,Jason S. Ross,Sanfeng Wu,Grant Aivazian,Philip Klement,Nirmal J. Ghimire,Jiaqiang Yan,D. G. Mandrus,Wang Yao,Xiaodong Xu

2014-01-01

Abstract:Two-dimensional (2D) materials, such as graphene, boron nitride, and transition metal dichalcogenides (TMDs), have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D monolayers can be stacked together with precise control to form novel van der Waals heterostructures for new functionalities. One highly coveted but yet to be realized heterostructure is that of differing monolayer TMDs with type II band alignment. Their application potential hinges on the fabrication, understanding, and control of bonded monolayers, with bound electrons and holes localized in individual monolayers, i.e. interlayer excitons. Here, we report the first observation of interlayer excitons in monolayer MoSe2-WSe2 heterostructures by both photoluminescence and photoluminescence excitation spectroscopy. The energy and luminescence intensity of interlayer excitons are highly tunable by an applied vertical gate voltage, implying electrical control of the heterojunction band-alignment. Using time resolved photoluminescence, we find that the interlayer exciton is long-lived with a lifetime of about 1.8 ns, an order of magnitude longer than intralayer excitons. Our work demonstrates the ability to optically pump interlayer electric polarization and provokes the immediate exploration of interlayer excitons for condensation phenomena, as well as new applications in 2D light-emitting diodes, lasers, and photovoltaic devices.