Abstract:Two-dimensional (2D) nanosheets of layered transition metal dichalcogenides (TMDs) have received significant attention because some of them are semiconductors with sizable band gaps and are naturally abundant. Here, we report the photolithographic-pattern transfer (PPT) technology used to fabricate FETs of two-dimensional materials. To explore the electrical properties and realize functional optoelectronics and electronics from semiconductors, the fabrication of devices (such as field-effect transistors (FET), diodes and Hall bars) and integrated circuits is necessary and important. An essential step in fabricating micro-/nanoelectronics is making the metal electrode arrays. Such a PPT method can be used to efficiently design and prepare complicated electrode arrays for electronics and optoelectronics, and is especially suitable for 2D materials. Few-layer MoS 2 made by electron beam lithography (EBL), gold-wire mask moving (GWM), and this method are used as templates for comparison. The mobility of our thin MoS 2 flake is comparable to the results of devices from EBL and better than the results of the GWM method. Further complicated device applications such as a top-gate FET, a Hall bar, and heterostructure transistors could also be easily realized based on such a method. We also report the growth and electric transport of Co doped MoS 2 bilayer. As the initial loading of the sulfur increases, the morphology of the Co x Mo 1– x S 2 (0 x <1) nanosheets becomes hexagons from David stars step by step at 680°C. We find that Co atoms mainly distribute at the edge of nanosheets. When the temperature increases from 680 to 750°C, high-quality cubic pyrite-type crystal structure CoS 2 grows on the surface of Co x Mo 1 − x S 2 nanosheet gradually and forms hexagonal film induced by the nanosheet. Electrical transport measurements reveal that the Co x Mo 1 − x S 2 nanosheets and CoS 2 films exhibit n-type semiconducting transport behavior and half-metallic behavior, respectively. Theoretical calculations of their band structures agree well with the experimental results. These alloy nanosheets of Co x Mo 1 − x S 2 should have large potential applications in the tunable optoelectronics. Then, we report the vapor phase growth and optoelectronic property of vertical bilayer SnS 2 /MoS 2 heterostructure. 2D van der Waals heterostructures with different types of band alignment have recently attracted great attention due to their unique optical and electrical properties. Most 2D heterostructures are formed by transfer-stacking two monolayers together, but the interfacial quality and controllable orientation of such artificial structures are inferior to those epitaxial grown heterostructures. An extremely Type II band alignment exists in this 2D heterostructure, with band offset larger than any other reported. Consistent with the large band offset, distinctive optical properties including strong photoluminescence quenching in the heterostructure area are observed in the heterostructure. The SnS 2 /MoS 2 heterostructures also exhibit well-aligned lattice orientation between the two layers, forming a periodic Moire superlattice pattern with high lattice mismatch. Electrical transport and photoresponsive studies demonstrate that the SnS 2 /MoS 2 heterostructures exhibit an obvious photovoltaic effect and possess high on/off ratio (>10 6 ), high mobility (27.6 cm 2 V −1 s −1 ) and high photoresponsivity (1.36 A W −1 ). Efficient synthesis of such vertical heterostructure may open up new realms in 2D functional electronics and optoelectronics. Finally we give some perspectives on studies of two-dimensional materials in future.

Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction

Interlayer Exciton Optoelectronics in a 2D Heterostructure P-N Junction.

Interlayer exciton optoelectronics in a 2D heterostructure p–n junction

Enhanced interlayer electron transfer by surface treatments in mixed-dimensional van der Waals semiconductor heterostructures

Title : Observation of Long-Lived Interlayer Excitons in Monolayer MoSe 2-WSe 2 Heterostructures

Direct Vapor Phase Growth and Optoelectronic Application of Large Band Offset Sns2/Mos2 Vertical Bilayer Heterostructures with High Lattice Mismatch

High-performance Optoelectronic Devices Based on Van Der Waals Vertical MoS2/MoSe2 Heterostructures

Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Robust Interlayer Coupling in Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures

(Invited) Two-Dimensional Layered Materials/Silicon Heterojunctions for Energy and Optoelectronic Applications

Growth and optoelectronic property of two-dimensional semiconductors

Strong interlayer coupling and long-lived interlayer excitons in two-dimensional perovskite derivatives and transition metal dichalcogenides van der Waals heterostructures

Equally Efficient Interlayer Exciton Relaxation and Improved Absorption in Epitaxial and Nonepitaxial MoS2/WS2 Heterostructures.

Enhanced Interlayer Neutral Excitons and Trions in MoSe2/MoS2/MoSe2 Trilayer Heterostructure

Probing the inter-layer exciton physics in a MoS$_2$/MoSe$_2$/MoS$_2$ van der Waals heterostructure

Interlayer Exciton in Multilayer-Monolayer Van Der Waals Heterostructures

Light Generation and Harvesting in a Van der Waals Heterostructure

Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure

Interlayer exciton emission in a MoS2/VOPc inorganic/organic van der Waals heterostructure.

Interfacial Charge Behavior Modulation In Perovskite Quantum Dot-Monolayer Mos2 0d-2d Mixed-Dimensional Van Der Waals Heterostructures