Abstract:van der Waals (vdW) heterostructures are promising building blocks for future ultrathin electronics. Fabricating vdW heterostructures by stamping monolayers at arbitrary angles provides an additional range of flexibility to tailor the resulting properties than could be expected by direct growth. Here, we report fabrication and comprehensive characterizations of WSe2/WS2 bilayer heterojunctions with various twist angles that were synthesized by artificially stacking monolayers of WS2 and WSe2 grown by chemical vapor deposition. After annealing the WSe2/WS2 bilayers, Raman spectroscopy reveals interlayer coupling with the appearance of a mode at 309.4 cm(-1) that is sensitive to the number of WSe2 layers. This interlayer coupling is associated with substantial quenching of the intralayer photoluminescence. In addition, microabsorption spectroscopy of WSe2/WS2 bilayers revealed spectral broadening and shifts as well as a net ∼10% enhancement in integrated absorption strength across the visible spectrum with respect to the sum of the individual monolayer spectra. The observed broadening of the WSe2 A exciton absorption band in the bilayers suggests fast charge separation between the layers, which was supported by direct femtosecond pump-probe spectroscopy. Density functional calculations of the band structures of the bilayers at different twist angles and interlayer distances found robust type II heterojunctions at all twist angles, and predicted variations in band gap for particular atomistic arrangements. Although interlayer excitons were indicated using femtosecond pump-probe spectroscopy, photoluminescence and absorption spectroscopies did not show any evidence of them, suggesting that the interlayer exciton transition is very weak. However, the interlayer coupling for the WSe2/WS2 bilayer heterojunctions indicated by substantial PL quenching, enhanced absorption, and rapid charge transfer was found to be insensitive to the relative twist angle, indicating that stamping provides a robust approach to realize reliable optoelectronics.

Interlayer Exciton-Phonon Bound State in Bi2Se3/monolayer WS2 van der Waals Heterostructures

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Interlayer Exciton-Phonon Coupling in MoSe2/WSe2 Heterostructures

Identification of twist-angle-dependent excitons in WS<sub>2</sub>/WSe<sub>2</sub> heterobilayers

Interlayer Exciton-Phonon Coupling in MoSe 2 /WSe 2 Heterostructures

Interlayer electron–phonon coupling in WSe2/hBN heterostructures

Modulating Interlayer and Intralayer Excitons in WS2/WSe2 Van Der Waals Heterostructures

Interlayer Exciton in Multilayer-Monolayer Van Der Waals Heterostructures

Phonon and Exciton Properties between WS 2 and MoS 2 Layers via Inversion Heterostructure Engineering

Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy.

Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS 0.6 Se 1.4 .

Enhanced Interactions of Interlayer Excitons in Free-Standing Heterobilayers

Influence of Edges and Interlayer Electron-phonon Coupling in WS2/h-BN Heterostructure

Valley phonons and exciton complexes in a monolayer semiconductor

Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe2/hBN Heterostructures by Photoluminescence Excitation Experiments

A Type-I Van Der Waals Heterostructure Formed by Monolayer WS2 and Trilayer PdSe2

Probing the interlayer excitation dynamics in WS2/WSe2 heterostructures with broadly tunable pump and probe energies

Atypical Exciton-Phonon Interactions in WS2 and WSe2 Monolayers Revealed by Resonance Raman Spectroscopy

Interlayer Excitons and Band Alignment in MoS2/hBN/WSe2 van der Waals Heterostructures

Superposition of intra- and inter-layer excitons in twistronic MoSe$_2$/WSe$_2$ bilayers probed by resonant Raman scattering

Interlayer Interactions in van der Waals Heterostructures: Electron and Phonon Properties