Abstract:Monolayers of transition metal dichalcogenides (TMDs) with their unique physical properties are very promising for future applications in novel electronic devices. In TMDs monolayers, strong and opposite spin splittings of the energy gaps at the K points allow for exciting carriers with various combinations of valley and spin indices using circularly polarized light, which can further be used in spintronics and valleytronics. The physical properties of van der Waals heterostructures composed of TMDs monolayers and hexagonal boron nitride (hBN) layers significantly depend on different kinds of interactions. Here, we report on observing both a strong increase in the emission intensity as well as a preservation of the helicity of the excitation light in the emission from hBN/WSe2/hBN heterostructures related to interlayer electron-phonon coupling. In combined low-temperature (T = 7 K) reflectivity contrast and photoluminescence excitation experiments, we find that the increase in the emission intensity is attributed to a double resonance, where the laser excitation and the combined Raman mode A'1 (WSe2) + ZO (hBN) are in resonance with the excited (2s) and ground (1s) states of the A exciton in a WSe2 monolayer. In reference to the 2s state, our interpretation is in contrast with previous reports, in which this state has been attributed to the hybrid exciton state existing only in the hBN-encapsulated WSe2 monolayer. Moreover, we observe that the electron-phonon coupling also enhances the helicity preservation of the exciting light in the emission of all observed excitonic complexes. The highest helicity preservation of more than 60% is obtained in the emission of the neutral biexciton and negatively charged exciton (trion) in its triplet state. Additionally, to the best of our knowledge, the strongly intensified emission of the neutral biexciton XX0 at double resonance condition is observed for the first time.

Phonon–phonon Interaction Assisted Electron–hole Recombination in WSe2/hBN Van Der Waals Heterostructure

Origin of interlayer exciton-phonon coupling in 2D heterostructures

Investigations of Electron-Electron and Interlayer Electron-Phonon Coupling in van der Waals hBN/WSe2/hBN Heterostructures by Photoluminescence Excitation Experiments

Resonant Raman scattering of surface phonon polaritons mediated by excitons in WSe$_2$ films

Interlayer Exciton-Phonon Bound State in Bi2Se3/monolayer WS2 van der Waals Heterostructures

Unusual Exciton-Phonon Interactions at van der Waals Engineered Interfaces

Acoustic Modulation of Excitonic Complexes in hBN/WSe 2 /hBN Heterostructures

Polaronic Trions Induced by Strong Interfacial Coupling in Monolayer WSe2

Coupling-Assisted Renormalization of Excitons and Vibrations in Compressed MoSe2–WSe2 Heterostructure

Phonon-Assisted Ultrafast Charge Transfer at van der Waals Heterostructure Interface.

Influence of Edges and Interlayer Electron-phonon Coupling in WS2/h-BN Heterostructure

Interlayer Exciton-Phonon Coupling in MoSe2/WSe2 Heterostructures

Bidirectional phonon emission in two-dimensional heterostructures triggered by ultrafast charge transfer

Vitality of Intralayer Vibration in hBN for Effective Long-Range Interlayer Hole Transfer across High Barriers in MoSe 2 /hBN/WSe 2 Heterostructures

Interlayer Excitons and Band Alignment in MoS2/hBN/WSe2 van der Waals Heterostructures

Interlayer excitons and Band Alignment in MoS$_2$/hBN/WSe$_2$ van der Waals Heterostructures

Vitality of Intralayer Vibration in hBN for Effective Long-Range Interlayer Hole Transfer across High Barriers in MoSe<sub>2</sub>/hBN/WSe<sub>2</sub> Heterostructures

Cross-dimensional electron-phonon coupling in van der Waals heterostructures

Enhanced Electron–phonon Coupling by Delocalizing Phonon States for Desirable Interlayer Transfer of Excited Charges in MoSSe/WS2 Heterobilayer

Excitonic Complexes and Emerging Interlayer Electron-Phonon Coupling in BN Encapsulated Monolayer Semiconductor Alloy: WS 0.6 Se 1.4 .

Engineering Interlayer Electron-Phonon Coupling in WS2/BN Heterostructures.