Engineering 2D material exciton lineshape with graphene/h-BN encapsulation
Steffi Y. Woo,Fuhui Shao,Ashish Arora,Robert Schneider,Nianjheng Wu,Andrew J. Mayne,Ching-Hwa Ho,Mauro Och,Cecilia Mattevi,Antoine Reserbat-Plantey,Alvaro Moreno,Hanan Herzig Sheinfux,Kenji Watanabe,Takashi Taniguchi,Steffen Michaelis de Vasconcellos,Frank H. L. Koppens,Zhichuan Niu,Odile Stéphan,Mathieu Kociak,F. Javier García de Abajo,Rudolf Bratschitsch,Andrea Konečná,Luiz H. G. Tizei
2023-11-13
Abstract:Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical doping, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs) to tailor novel functionalities remains largely unexplored. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton lineshape and charge state. Fano-like asymmetric spectral features are produced in WS$_{2}$, MoSe$_{2}$ and WSe$_{2}$ vdWHs combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe$_{2}$/graphene with a neutral exciton redshift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron-beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward shaping the spectral profile of narrow optical modes for application in nanophotonic devices.
Mesoscale and Nanoscale Physics