Abstract:2D layered materials, such as graphene and transition metal dichalcogenides (TMDs), have aroused great interest during the last decade because of their extraordinary properties for both fundamental physics and promising potential applications.[1–16] Though graphene has very high mobility, there is a key bottleneck for graphene-based transistors that its on-off ratio is very small due to the inherent gapless band structure of graphene.[1,17] Superior to graphene, monolayer (1L) TMDs with native direct bandgaps in the visible and near-infrared range have begun to attract increasing attention as 2D semiconductors. TMDs with common formula MX2 (M = Mo, W; X = S, Se), as representative prototype systems of 2D semiconductors, have been widely and intensively studied. Among them, 1L tungsten disulfide (WS2) is attracting a growing interest due to 2D semiconductor tungsten disulfide (WS2) attracts significant interest in both fundamental physics and many promising applications such as light emitters, photodetectors/sensors, valleytronics, and flexible nanoelectronics, due to its fascinating optical, electronic, and mechanical properties. Herein, basic exciton properties of monolayer WS2 are reviewed including neutral excitons, charged excitons, bounded excitons, biexcitons, and the effects of electrostatic gating, chemical doping, strain, magnetic field, circular polarized light, and substrate on these excitonic structures. Besides basic excitonic emission, single-photon emission, exciton–polaritons, and stimulated emission in monolayer WS2 are also discussed. The understanding of these optical phenomena is critical for the development of potential optical applications in electronic and optoelectronic devices. Finally, a summary and future prospective of the challengers and developments regarding 2D semiconductor WS2 is presented. 2D Semiconductors

Nonblinking, intense two-dimensional light emitter: monolayer WS2 triangles.

Enhancement of the Monolayer Tungsten Disulfide Exciton Photoluminescence with a Two-Dimensional Material/Air/Gallium Phosphide In-Plane Microcavity.

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Extraordinary room-temperature photoluminescence in WS2 monolayers

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.

Optical Properties of 2D Semiconductor WS<sub>2</sub>

Revealing the Competition Between Defect‐Trapped Exciton and Band‐Edge Exciton Photoluminescence in Monolayer Hexagonal WS2

Optical Properties of 2D Semiconductor WS2

Synthesis and optical properties of large-area single-crystalline 2D semiconductor WS2 monolayer from chemical vapor deposition

Synthesis and optical properties of large-scale single-crystalline two-dimensional semiconductor WS2 monolayer from chemical vapor deposition

Extraordinary Room-Temperature Photoluminescence in Triangular WS2 Monolayers.

Strain-Induced Alternating Photoluminescence Segmentation in Hexagonal Monolayer Tungsten Disulfide Grown by Physical Vapor Deposition

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Biaxial strain tuned upconversion photoluminescence of monolayer WS2

Spatial Non-Uniformity in Exfoliated WS2 Single layers

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Photoluminescence Lightening: Extraordinary Oxygen Modulated Dynamics in WS 2 Monolayers

Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS2.

Intrinsic Excitonic Emission and Valley Zeeman Splitting in Epitaxial MS2 (M = Mo and W) Monolayers on Hexagonal Boron Nitride

Giant Enhancement of Photoluminescence Emission in Monolayer WS2 by Femtosecond Laser Irradiation

Enhancement of the Monolayer WS2 Exciton Photoluminescence with a 2D-Material/Air/GaP In-Plane Microcavity